Method for manufacturing semiconductor device

• US 8,530,289 B2
• Filed: 04/21/2011
• Issued: 09/10/2013
• Est. Priority Date: 04/23/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Lee, Cheung
• Application Number:
  US13/091,194
• Publication Number:
  US 20110263084A1
• Time in Patent Office: 873 Days
• Field of Search: 438/135, 438/161, 438/315, 257/E21.37, 257/E21.372, 257/E21.378, 257/E21.386, 257/E21.4, 257/E21.424
• US Class Current: 438/161
• CPC Class Codes: G11C 16/0433 comprising cells containing a single floating gate transistor and one or more separate select transistors
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02323 introduction of oxygen
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/441 Deposition of conductive or insulating materials for electrodes
• CPC Class Codes: H01L 21/465 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/469
• CPC Class Codes: H01L 21/4757 After-treatment
• CPC Class Codes: H01L 21/477 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/38 - H01L21/449 and H01L21/461 - H01L21/475 take precedence
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10B 41/00 Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of forming a first insulating film; performing oxygen doping treatment on the first insulating film to supply oxygen to the first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connected to the source electrode and the drain electrode, over the first insulating film; performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film; and forming a gate electrode in a region overlapping with the oxide semiconductor film, over the second insulating film. The manufacturing method allows the formation of a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and high reliability.

Claims

1. A method for manufacturing a semiconductor device, the method comprising the steps of:

forming a first insulating film over a substrate;

performing oxygen doping treatment on the first insulating film;

forming a source electrode, a drain electrode, and an oxide semiconductor film over the first insulating film;

forming a second insulating film over the source electrode, the drain electrode, and the oxide semiconductor film; and

forming a gate electrode over the second insulating film so that the gate electrode overlaps with the oxide semiconductor film,

wherein the first insulating film comprises a fourth insulating film and a fifth insulating film over the fourth insulating film, and

wherein the fifth insulating film comprises a component which is the same as that of the oxide semiconductor film.

2. The method according to claim 1, wherein the oxide semiconductor film is formed over the source electrode and the drain electrode.

3. The method according to claim 1, wherein the source electrode and the drain electrode are formed over the oxide semiconductor film.

4. The method according to claim 1, further comprising a step of forming a third insulating film over the gate electrode.

5. The method according to claim 4,

wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film, and

wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film.

6. The method according to claim 4,

wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film,

wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film, and

wherein the seventh insulating film comprises a component which is different from that of the oxide semiconductor film.

7. The method according to claim 1,

wherein the fourth insulating film comprises a component which is different from that of the oxide semiconductor film.

8. The method according to claim 1, wherein the oxide semiconductor film comprises gallium as a component.

9. The method according to claim 1, wherein a heating of the substrate is performed at a temperature equal to or higher than 100°

C. and equal to or lower than 600°

C.

10. The method according to claim 1, further comprising a step of performing heat treatment on the oxide semiconductor film at a temperature equal to or higher than 250°

C. and equal to or lower than 650°

C.

11. A method for manufacturing a semiconductor device, the method comprising the steps of:

forming a first insulating film over a substrate;

supplying oxygen to the first insulating film;

forming a source electrode, a drain electrode, and an oxide semiconductor film over the first insulating film;

forming a second insulating film over the source electrode, the drain electrode, and the oxide semiconductor film; and

forming a gate electrode over the second insulating film so that the gate electrode overlaps with the oxide semiconductor film,

wherein the first insulating film comprises a fourth insulating film and a fifth insulating film over the fourth insulating film, and

wherein the fifth insulating film comprises a component which is the same as that of the oxide semiconductor film.

12. The method according to claim 11, wherein the oxide semiconductor film is formed over the source electrode and the drain electrode.

13. The method according to claim 11, wherein the source electrode and the drain electrode are formed over the oxide semiconductor film.

14. The method according to claim 11, further comprising a step of forming a third insulating film over the gate electrode.

15. The method according to claim 14,

wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film, and

wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film.

16. The method according to claim 14,

wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film,

wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film, and

wherein the seventh insulating film comprises a component which is different from that of the oxide semiconductor film.

17. The method according to claim 11,

wherein the fourth insulating film comprises a component which is different from that of the oxide semiconductor film.

18. The method according to claim 11, wherein the oxide semiconductor film comprises gallium as a component.

19. The method according to claim 11, further comprising a step of performing heat treatment on the oxide semiconductor film at a temperature equal to or higher than 250°

C. and equal to or lower than 650°

C.

20. A method for manufacturing a semiconductor device, the method comprising the steps of:

forming a first insulating film over a substrate;

performing oxygen doping treatment on the first insulating film; and

forming a transistor over the first insulating film, the transistor comprising a source electrode, a drain electrode, an oxide semiconductor film, a gate insulating film, and a gate electrode,

wherein the first insulating film comprises a fourth insulating film and a fifth insulating film over the fourth insulating film, and

wherein the fifth insulating film comprises a component which is the same as that of the oxide semiconductor film.

21. The method according to claim 20, wherein the oxide semiconductor film is formed over the source electrode and the drain electrode.

22. The method according to claim 20, wherein the source electrode and the drain electrode are formed over the oxide semiconductor film.

23. The method according to claim 20, further comprising a step of forming a third insulating film over the transistor.

24. The method according to claim 23,

wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film, and

wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film.

25. The method according to claim 23,

wherein the third insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film,

wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film, and

wherein the seventh insulating film comprises a component which is different from that of the oxide semiconductor film.

26. The method according to claim 20,

wherein the fourth insulating film comprises a component which is different from that of the oxide semiconductor film.

27. The method according to claim 20, wherein the oxide semiconductor film comprises gallium as a component.