Process for producing silicon and oxide films from organoaminosilane precursors

• US 8,530,361 B2
• Filed: 12/22/2010
• Issued: 09/10/2013
• Est. Priority Date: 05/23/2006
• Status: Active Grant

• Current Assignee: Versum Materials US, LLC (Merck & Co., Inc.)
• Original Assignee: Air Products and Chemicals Incorporated (Linde Plc)
• Inventors: Xiao, Manchao, Lei, Xinjian, Bowen, Heather Regina, O'Neill, Mark Leonard
• Primary Examiner(s): Lee, Kyoung
• Application Number:
  US12/976,041
• Publication Number:
  US 20110262642A1
• Time in Patent Office: 993 Days
• Field of Search: None
• US Class Current: 438/781
• CPC Class Codes: C07F 7/025 without C-silicon linkages
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02219 the compound comprising silicon and nitrogen
• CPC Class Codes: H01L 21/02222 the compound being a silazane
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3145 formed by deposition from a gas or vapour
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC

Abstract

A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas:

wherein R is selected from a C₁-C₁₀ linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C₅-C₁₀ aromatic group with or without substituents, a C₃-C₁₀ heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R¹ is selected from a C₃-C₁₀ linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C₆-C₁₀ aromatic group with or without substituents, a C₃-C₁₀ heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R¹ in formula A can be combined into a cyclic group and R² representing a single bond, (CH₂)_n chain, a ring, C₃-C₁₀ branched alkyl, SiR₂, or SiH₂.

Claims

1. A method for forming a silicon oxide film on a substrate comprising:

reacting an oxidizing agent with a precursor comprising an organoaminosilane selected from the group consisting of an organoaminosilane represented by the formulas;

2. The method of claim 1 wherein the vapor deposition is at least one selected from the group consisting of at least one selected from chemical vapor deposition, low pressure vapor deposition, plasma enhanced chemical vapor deposition, cyclic chemical vapor deposition, plasma enhanced cyclic chemical vapor deposition, atomic layer deposition, and plasma enhanced atomic layer deposition.

3. The method of claim 1 wherein the precursor further comprises a silicon-containing precursor.

4. The method of claim 3 wherein the silicon-containing precursor is at least one selected from the group consisting of hexamethyl disiloxane, dimethyl siloxane, methylsilane, dimethylsilane, vinyl trimethylsilane, trimethylsilane, tetramethylsilane, ethylsilane, disilylmethane, 2,4-disilapentane, 1,4-disilabutane, 2,5-disilahexane, 2,2-disilylpropane, 1,3,5-trisilacyclohexane, dimethylphenylsilane, diphenylmethylsilane, dimethyldimethoxysilane, 1,3,5,7-tetramethylcyclotetrasiloxane, 1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetrasila-4-oxo-heptane, 2,4,6,8-tetrasila-3,7-dioxo-nonane, 2,2-dimethyl-2,4,6,8-tetrasila-3,7-dioxo-nonane, octamethylcyclotetrasiloxane, [1,3,5,7,9]-pentamethylcyclopentasiloxane, 1,3,5,7-tetrasila-2,6-dioxo-cyclooctane, hexamethylcyclotrisiloxane, 1,3-dimethyldisiloxane, 1,3,5,7,9-pentamethylcyclopentasiloxane, hexamethoxydisiloxane, and mixtures thereof.

5. A method for forming a silicon oxide film on a substrate comprising:

forming via vapor deposition of the silicon oxide film on the substrate from a composition comprising at least one organoaminosilane precursor selected from the group consisting of an organoaminosilane represented by the formulas;

6. A method for forming a silicon oxide film on a substrate comprising:

introducing an organoaminosilane represented by the formulas;

7. A method for forming a silicon oxide film on a substrate wherein the film comprises a thickness, the method comprising:

a. introducing an at least one organoaminosilane represented by the formulas into a deposition chamber;

8. The method of claim 7 wherein steps a. through d. and optional step e. are repeated until the thickness of film is established.

9. The method of claim 7 is an atomic layer deposition process.

10. The method of claim 7 is a plasma enhanced cyclic chemical vapor deposition process.

11. The method of claim 7 wherein a temperature of the substrate ranges from about 200 to about 600°

C.

12. A composition for depositing a silicon oxide film by a vapor deposition process, the composition comprising:

an organoaminosilane precursor represented by the following formula A;

13. The composition of claim 12 wherein the vapor deposition process is at least one selected from the group consisting of cyclic chemical vapor deposition, metal organic cyclic chemical vapor deposition, thermal chemical vapor deposition, plasma enhanced chemical vapor deposition, high density plasma enhanced chemical vapor deposition, photon assisted chemical vapor deposition, plasma-photon assisted plasma enhanced chemical vapor deposition, cryogenic chemical vapor deposition, chemical assisted vapor deposition, hot-filament chemical vapor deposition, low energy chemical vapor deposition, atomic layer deposition, low pressure chemical vapor deposition, and combinations thereof.

14. The composition of claim 12 wherein R and R¹ in Formula A are each independently selected from the group consisting of isopropyl, t-butyl, sec-butyl, t-pentyl, and sec-pentyl groups.

15. The composition of claim 14 wherein R and R¹ in Formula A are combined into a cyclic group.

16. A composition for depositing a silicon oxide film in a vapor deposition process, the composition comprising:

an organoaminosilane precursor represented by the following formula; and

17. The composition of claim 16 wherein the oxygen source is at least one selected from the group consisting of:

water (H₂O), oxygen (O₂), oxygen plasma, ozone (O₃), NO, NO₂, hydrogen peroxide, carbon monoxide (CO), carbon dioxide (CO₂), and combinations thereof.

18. The composition of claim 16 wherein the composition is contained in a pressurizable vessel fitted with the proper valves and fittings to allow delivery of to the process reactor.

19. The composition of claim 16 wherein the vapor deposition process comprises atomic layer deposition.