Process for producing silicon and oxide films from organoaminosilane precursors
First Claim
1. A method for forming a silicon oxide film on a substrate comprising:
- reacting an oxidizing agent with a precursor comprising an organoaminosilane selected from the group consisting of an organoaminosilane represented by the formulas;
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Abstract
A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas:
wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2)n chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.
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Citations
19 Claims
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1. A method for forming a silicon oxide film on a substrate comprising:
reacting an oxidizing agent with a precursor comprising an organoaminosilane selected from the group consisting of an organoaminosilane represented by the formulas; - View Dependent Claims (2, 3, 4)
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5. A method for forming a silicon oxide film on a substrate comprising:
forming via vapor deposition of the silicon oxide film on the substrate from a composition comprising at least one organoaminosilane precursor selected from the group consisting of an organoaminosilane represented by the formulas;
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6. A method for forming a silicon oxide film on a substrate comprising:
introducing an organoaminosilane represented by the formulas;
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7. A method for forming a silicon oxide film on a substrate wherein the film comprises a thickness, the method comprising:
a. introducing an at least one organoaminosilane represented by the formulas into a deposition chamber; - View Dependent Claims (8, 9, 10, 11)
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12. A composition for depositing a silicon oxide film by a vapor deposition process, the composition comprising:
an organoaminosilane precursor represented by the following formula A; - View Dependent Claims (13, 14, 15)
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16. A composition for depositing a silicon oxide film in a vapor deposition process, the composition comprising:
an organoaminosilane precursor represented by the following formula; and - View Dependent Claims (17, 18, 19)
Specification