Field-effect transistor, and process for producing field-effect transistor
First Claim
1. A field-effect transistor comprising a gate electrode, an active layer, a source electrode and a drain electrode, wherein a crystalline oxide containing indium and having an electron carrier concentration of less than 1018/cm3 is used as the active layer, and the gate electrode is in self-alignment with the source electrode and the drain electrode, and the crystalline oxide has a bixbite structure and is polycrystalline.
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Abstract
To provide a field-effect transistor improved in transparency, electrical properties, stability, uniformity, reproducibility, heat resistance and durability, and as a reduced overlap capacity between electrodes.
A field-effect thin film transistor 1001 includes a gate electrode 1025, an active layer, a source electrode 1022 and a drain electrode 1023, wherein a crystalline oxide 1021 containing indium and having an electron carrier concentration of less than 1018/cm3 is used as the active layer, and the gate electrode 1025 is in self-alignment with the source electrode 1022 and the drain electrode 1023. The crystalline oxide 1021 contains a positive trivalent element different from a positive divalent element or indium.
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Citations
39 Claims
- 1. A field-effect transistor comprising a gate electrode, an active layer, a source electrode and a drain electrode, wherein a crystalline oxide containing indium and having an electron carrier concentration of less than 1018/cm3 is used as the active layer, and the gate electrode is in self-alignment with the source electrode and the drain electrode, and the crystalline oxide has a bixbite structure and is polycrystalline.
Specification