Semiconductor device
First Claim
1. A semiconductor device comprising:
- an oxide semiconductor layer;
a source electrode layer comprising a first mixed layer; and
a drain electrode layer comprising a second mixed layer,wherein each of the first mixed layer and the second mixed layer comprises an oxide of a first metal having a lower work function than the oxide semiconductor layer, or an oxide of an alloy comprising such a metal,wherein each of the first mixed layer and the second mixed layer further comprises a second metal, andwherein a first region of each of the first mixed layer and the second mixed layer that is in contact with the oxide semiconductor layer has a larger concentration of the oxide of the first metal or the oxide of the alloy than a second region of each of the first mixed layer and the second mixed layer that is not in contact with the oxide semiconductor layer.
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Accused Products
Abstract
An object is, in a thin film transistor including an oxide semiconductor layer, to reduce contact resistance between the oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer. The source and drain electrode layers have a stacked-layer structure of two or more layers in which a layer in contact with the oxide semiconductor layer is formed using an oxide of a metal whose work function is lower than the work function of the oxide semiconductor layer or an oxide of an alloy containing such a metal. Layers other than the layer in contact with the oxide semiconductor layer of the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, or W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.
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Citations
24 Claims
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1. A semiconductor device comprising:
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an oxide semiconductor layer; a source electrode layer comprising a first mixed layer; and a drain electrode layer comprising a second mixed layer, wherein each of the first mixed layer and the second mixed layer comprises an oxide of a first metal having a lower work function than the oxide semiconductor layer, or an oxide of an alloy comprising such a metal, wherein each of the first mixed layer and the second mixed layer further comprises a second metal, and wherein a first region of each of the first mixed layer and the second mixed layer that is in contact with the oxide semiconductor layer has a larger concentration of the oxide of the first metal or the oxide of the alloy than a second region of each of the first mixed layer and the second mixed layer that is not in contact with the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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an oxide semiconductor layer; a source electrode layer comprising a first mixed layer; and a drain electrode layer comprising a second mixed layer, wherein each of the first mixed layer and the second mixed layer comprises an oxide of a first metal having a lower work function than the oxide semiconductor layer, or an oxide of an alloy comprising such a metal, wherein each of the first mixed layer and the second mixed layer further comprises a second metal having high heat resistance, and wherein a first region of each of the first mixed layer and the second mixed layer that is in contact with the oxide semiconductor layer has a larger concentration of the oxide of the first metal or the oxide of the alloy than a second region of each of the first mixed layer and the second mixed layer that is not in contact with the oxide semiconductor layer. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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an oxide semiconductor layer; a source electrode layer comprising a first mixed layer; and a drain electrode layer comprising a second mixed layer, wherein each of the first mixed layer and the second mixed layer comprises an oxide of a first metal having a work function lower than an electron affinity of the oxide semiconductor layer, or an oxide of an alloy comprising such a metal, wherein each of the first mixed layer and the second mixed layer further comprises a second metal having high heat resistance, and wherein a first region of each of the first mixed layer and the second mixed layer that is in contact with the oxide semiconductor layer has a larger concentration of the oxide of the first metal or the oxide of the alloy than a second region of each of the first mixed layer and the second mixed layer that is not in contact with the oxide semiconductor layer. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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an oxide semiconductor layer; a source electrode layer comprising a first mixed layer; and a drain electrode layer comprising a second mixed layer, wherein each of the first mixed layer and the second mixed layer comprises an oxide of a first metal having a work function lower than an electron affinity of the oxide semiconductor layer, or an oxide of an alloy comprising such a metal, wherein each of the first mixed layer and the second mixed layer further comprises a second metal, and wherein a first region of each of the first mixed layer and the second mixed layer that is in contact with the oxide semiconductor layer has a larger concentration of the oxide of the first metal or the oxide of the alloy than a second region of each of the first mixed layer and the second mixed layer that is not in contact with the oxide semiconductor layer. - View Dependent Claims (20, 21, 22, 23, 24)
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Specification