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Cross-point memory structures

  • US 8,530,939 B2
  • Filed: 05/31/2012
  • Issued: 09/10/2013
  • Est. Priority Date: 02/19/2009
  • Status: Active Grant
First Claim
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1. A cross-point memory structure, comprising:

  • a line of first electrode material extending along a first direction across a silicon-containing semiconductor substrate;

    the first electrode material comprising one or more of platinum, titanium nitride and tantalum nitride;

    a multi-sided container of access device materials over the first electrode material, the access device materials including an electrically conductive metal-containing material and at least two insulative materials, the insulative materials being between the electrically conductive metal-containing material and the first electrode material;

    memory element material within the multi-sided container; and

    a line of second electrode material over the memory element material and extending along a second direction that intersects the first direction of the line of first electrode material.

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