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Semiconductor recording device with error recovery

  • US 8,533,559 B2
  • Filed: 04/20/2009
  • Issued: 09/10/2013
  • Est. Priority Date: 05/12/2008
  • Status: Active Grant
First Claim
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1. A semiconductor recording device incorporating a multi-level nonvolatile memory storing a plurality of bits per memory cell and having physical blocks composed of a plurality of pages, wherein a plurality of said physical blocks are configured as one group, comprising:

  • a first error correcting code (ECC) generator for adding an ECC parity extracted at a predetermined interval in inputted data and for generating a first ECC;

    a data distributor for distributing the first ECC generated by said first ECC generator to different physical blocks in the group in a predetermined size;

    a data writer for writing data distributed by said data distributor to the respective physical blocks of a group;

    a writing error detector for detecting, when writing to said nonvolatile memory in a page of the physical block, a writing error;

    an error flag generator for generating an error flag showing a possibility of the writing error with respect to a page of a cell that stores a plurality of bits, wherein respective bits of a page in which an error is detected by said writing error detector share a common cell of said nonvolatile memory;

    a data reader for reading data of a page in which the error flag is generated by said error flag generator and all data configuring the first ECC from the respective physical blocks; and

    a data recovering part for recovering data of a cell sharing page specified by said error flag generator from the data read by said data reader and writing the recovered data to a page of a physical block in which data is not previously written.

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