Thyristor random access memory device and method
First Claim
Patent Images
1. A method comprising:
- forming a channel in a first type semiconductor portion to form a “
U”
shaped portion;
forming a dielectric material within the channel;
forming a control line over the dielectric material;
implanting a second type dopant into both top portions of the “
U”
shaped portion to form a pair of implanted regions above the control line; and
forming an upper first type semiconductor portion over one of the implanted regions.
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Abstract
Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided reduce a need for manufacturing methods such as deep dopant implants.
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Citations
15 Claims
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1. A method comprising:
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forming a channel in a first type semiconductor portion to form a “
U”
shaped portion;forming a dielectric material within the channel; forming a control line over the dielectric material; implanting a second type dopant into both top portions of the “
U”
shaped portion to form a pair of implanted regions above the control line; andforming an upper first type semiconductor portion over one of the implanted regions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method comprising:
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forming a conductor region beneath a first type semiconductor portion separated therefrom by a dielectric material; forming a channel in the first type semiconductor portion to form a “
U”
shaped portion;forming a dielectric material within the channel; forming a control line over the dielectric material; implanting a second type dopant into both top portions of the “
U”
shaped portion to form a pair implanted regions; andforming an upper first type semiconductor portion over one of the implanted regions. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification