×

Method of manufacturing a semiconductor device and structure

  • US 8,536,023 B2
  • Filed: 11/22/2010
  • Issued: 09/17/2013
  • Est. Priority Date: 11/22/2010
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of manufacturing semiconductor wafers, the method comprising:

  • providing a donor wafer comprising a semiconductor substrate;

    performing a lithography step and processing the donor wafer; and

    performing at least two subsequent steps of layer transfer out of said donor wafer, each said step producing a transferred layer,wherein each of said transferred layer had been affected by said lithography step, andwherein each of said transferred layer comprises a plurality of transistors with side gates, andwherein said layer transfer comprises an ion-cut, said ion-cut comprising an ion implant thru said transistors.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×