Method of manufacturing a semiconductor device and structure
First Claim
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1. A method of manufacturing semiconductor wafers, the method comprising:
- providing a donor wafer comprising a semiconductor substrate;
performing a lithography step and processing the donor wafer; and
performing at least two subsequent steps of layer transfer out of said donor wafer, each said step producing a transferred layer,wherein each of said transferred layer had been affected by said lithography step, andwherein each of said transferred layer comprises a plurality of transistors with side gates, andwherein said layer transfer comprises an ion-cut, said ion-cut comprising an ion implant thru said transistors.
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Abstract
A method of manufacturing semiconductor wafers, the method including: providing a donor wafer including a semiconductor substrate; performing a lithography step and processing the donor wafer; and performing at least two subsequent steps of layer transfer out of the donor wafer, each layer transfer step producing a transferred layer, where each of the transferred layers had been affected by the lithography step, and where each of the transferred layer includes a plurality of transistors with side gates, and where the layer transfer includes an ion-cut, the ion-cut including an ion implant thru the transistors.
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Citations
48 Claims
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1. A method of manufacturing semiconductor wafers, the method comprising:
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providing a donor wafer comprising a semiconductor substrate; performing a lithography step and processing the donor wafer; and performing at least two subsequent steps of layer transfer out of said donor wafer, each said step producing a transferred layer, wherein each of said transferred layer had been affected by said lithography step, and wherein each of said transferred layer comprises a plurality of transistors with side gates, and wherein said layer transfer comprises an ion-cut, said ion-cut comprising an ion implant thru said transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing semiconductor wafers, the method comprising:
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providing a first wafer comprising a semiconductor substrate; performing a lithography step and processing said first wafer accordingly; and
thencompleting the subsequent fabrication of at least a second wafer and a third wafer with distinct steps, wherein each of said at least a second wafer and a third wafer utilized said lithography step, and wherein each of said at least a second wafer and a third wafer comprises a plurality of transistors with side gates, and wherein said distinct steps comprise an ion-cut, said ion-cut comprising an ion implant thru said transistors. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A method of manufacturing semiconductor wafers, the method comprising:
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providing a first wafer comprising a semiconductor substrate; performing a lithography step and processing said first wafer accordingly; and
thencompleting subsequently a wafer fabrication providing at least a first layer and a second layer, wherein each of said first layer and said second layer comprises a portion of said first wafer, and wherein each of said first layer and said second layer comprises transistors of mono-crystallized material, said transistors with side gates, and wherein each of said first layer and said second layer had been affected by said lithography step, and wherein said wafer fabrication comprises an ion-cut, said ion-cut comprising an ion implant thru said transistors. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27)
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28. A method of manufacturing semiconductor wafers, the method comprising:
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providing a base wafer; performing a first and then subsequently a second layer transfer of a first layer and a second layer onto said base wafer; and
thenperforming a lithography step and processing said first layer and said second layer according to said lithography step; and
thenperforming a third layer transfer of said first layer and said second layer, wherein said first layer and said second layer comprise substantially the same material, and wherein each of said first layer and said second layer comprises a plurality of transistors with side gates, and wherein said third layer transfer comprises an ion-cut, said ion-cut comprising an ion implant thru said transistors. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37)
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38. A method of manufacturing semiconductor wafers, the method comprising:
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providing a donor wafer comprising a semiconductor substrate; performing a lithography step and processing said donor wafer accordingly; and
thenperforming a first layer transfer to a carrier wafer and subsequently performing at least a second step and a third step of layer transfer out of said carrier wafer forming at least two transferred layers, wherein each of said at least two transferred layers had been affected by said lithography step, and wherein each of said at least two transferred layers comprise a plurality of transistors with side gates, and wherein said second step and said third step of layer transfer each comprise an ion-cut, said ion-cut comprising an ion implant thru said transistors. - View Dependent Claims (39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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Specification