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Manufacturing method for metal gate using ion implantation

  • US 8,536,038 B2
  • Filed: 06/21/2011
  • Issued: 09/17/2013
  • Est. Priority Date: 06/21/2011
  • Status: Active Grant
First Claim
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1. A manufacturing method for a metal gate comprising:

  • providing a substrate having at least a semiconductor device with a conductivity type formed thereon, wherein the semiconductor device further comprises at least a high-k gate dielectric layer, a bottom barrier layer, and an etch stop layer;

    forming a gate trench in the semiconductor device, and the etch stop layer is exposed in a bottom of the gate trench;

    forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench; and

    performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.

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