Equipment and methods for etching of MEMS
First Claim
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1. A method for etching a microelectromechanical systems (MEMS) device comprising:
- providing a substrate comprising a MEMS device formed on a surface thereof, wherein the MEMS device comprises a sacrificial material disposed between two electrodes;
relatively moving an etching gas inlet and the substrate;
directing a gas stream comprising a gas phase etchant at a surface of the MEMS device through the etching gas inlet, wherein directing the gas stream comprises flowing at least a portion of the gas stream along at least one flow guide surface arranged adjacent to the etching gas inlet, and the flow guide surface is configured to guide the gas stream from the etching gas inlet substantially parallel to the substrate, wherein the first flow guide surface and a height between the first flow guide surface and the substrate define an active etching zone with an aspect ratio of a width of the first flow guide surface to the height greater than about 10;
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selectively etching to remove the sacrificial material from between the two electrodes of the MEMS.
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Abstract
Etching equipment and methods are disclosed herein for more efficient etching of sacrificial material from between permanent MEMS structures. An etching head includes an elongate etchant inlet structure, which may be slot-shaped or an elongate distribution of inlet holes. A substrate is supported in proximity to the etching head in a manner that defines a flow path substantially parallel to the substrate face, and permits relative motion for the etching head to scan across the substrate.
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Citations
21 Claims
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1. A method for etching a microelectromechanical systems (MEMS) device comprising:
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providing a substrate comprising a MEMS device formed on a surface thereof, wherein the MEMS device comprises a sacrificial material disposed between two electrodes; relatively moving an etching gas inlet and the substrate; directing a gas stream comprising a gas phase etchant at a surface of the MEMS device through the etching gas inlet, wherein directing the gas stream comprises flowing at least a portion of the gas stream along at least one flow guide surface arranged adjacent to the etching gas inlet, and the flow guide surface is configured to guide the gas stream from the etching gas inlet substantially parallel to the substrate, wherein the first flow guide surface and a height between the first flow guide surface and the substrate define an active etching zone with an aspect ratio of a width of the first flow guide surface to the height greater than about 10;
1; andselectively etching to remove the sacrificial material from between the two electrodes of the MEMS. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 21)
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18. A method for etching a microelectromechanical systems (MEMS) device comprising:
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providing a substrate having a MEMS device formed on a surface of the substrate, wherein the MEMS device comprises a sacrificial material disposed between two electrodes; directing a gas stream comprising a gas phase etchant towards the MEMS device through an etching gas inlet, wherein directing the gas stream comprises flowing the gas stream along at least one flow guide surface arranged adjacent to the etching gas inlet, and the flow guide surface is configured to guide the gas stream from the etching gas inlet substantially parallel to the substrate, wherein the first flow guide surface and a height between the first flow guide surface and the substrate define an active etching zone with an aspect ratio of a width of the first flow guide surface to the height greater than about 10;
1;selectively etching to remove the sacrificial material from between the two electrodes with the gas phase etchant; and withdrawing at least a portion of the gas stream, contemporaneously with directing the gas stream, through at least one exhaust opening. - View Dependent Claims (19, 20)
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Specification