Methods of forming SiC MOSFETs with high inversion layer mobility
First Claim
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1. A method of forming an oxide layer on silicon carbide, comprising:
- thermally growing an oxide layer in the presence of metallic impurities on a layer of silicon carbide in a silicon carbide tube;
flowing NO into the silicon carbide tube; and
annealing the oxide layer in an environment containing the NO at a temperature greater than 1300°
C. in the silicon carbide tube.
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Abstract
Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO in a silicon carbide tube that may be coated with silicon carbide. To form the oxide layer, a preliminary oxide layer may be thermally grown on a silicon carbide layer in dry O2, and the preliminary oxide layer may be re-oxidized in wet O2.
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10 Claims
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1. A method of forming an oxide layer on silicon carbide, comprising:
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thermally growing an oxide layer in the presence of metallic impurities on a layer of silicon carbide in a silicon carbide tube; flowing NO into the silicon carbide tube; and annealing the oxide layer in an environment containing the NO at a temperature greater than 1300°
C. in the silicon carbide tube. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification