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Manufacturing method of semiconductor device

  • US 8,536,571 B2
  • Filed: 01/09/2012
  • Issued: 09/17/2013
  • Est. Priority Date: 01/12/2011
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a first insulating film over the gate electrode;

    an oxide semiconductor layer over the gate electrode with the first insulating film interposed therebetween; and

    a first electrode and a second electrode over the oxide semiconductor layer,wherein the first electrode and the second electrode are provided inside an upper end of the oxide semiconductor layer when seen from the above.

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