Display device

• US 8,536,577 B2
• Filed: 08/17/2012
• Issued: 09/17/2013
• Est. Priority Date: 09/04/1996
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Zhang, Hongyong, Teramoto, Satoshi
• Primary Examiner(s): Ho, Anthony
• Application Number:
  US13/587,958
• Publication Number:
  US 20120305927A1
• Time in Patent Office: 396 Days
• Field of Search: 257/59, 257/72, 257/E27.001
• US Class Current: 257/59
• CPC Class Codes: G02F 1/136209 Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer

Abstract

The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode.

Claims

1. A semiconductor device comprising:

a transistor comprising a gate, a source and a drain;

a first line, wherein a portion of the first line constitutes the gate;

a layer comprising a silicon nitride film in contact with the first line;

a second line electrically connected to one of the source and the drain;

a third line comprising a first portion extending along the first line, and a second portion extending along the second line;

a pixel electrode overlapping the third line; and

a capacitor comprising the pixel electrode and the third line,

wherein the second line is not electrically connected to the third line.

2. The semiconductor device according to claim 1, wherein the second portion of the third line overlaps with the second line.

3. The semiconductor device according to claim 1, wherein the first portion of the third line overlaps with the first line.

4. The semiconductor device according to claim 1, wherein the third line is formed over the first line.

5. The semiconductor device according to claim 1, wherein the third line comprises ITO.

6. A semiconductor device comprising:

a transistor comprising a gate, a source and a drain;

a first line, wherein a portion of the first line constitutes the gate;

a layer comprising a silicon nitride film in contact with the first line;

a second line electrically connected to one of the source and the drain;

a third line comprising a first portion extending along the first line, and a second portion extending along the second line;

a pixel electrode overlapping the third line; and

a capacitor comprising the pixel electrode and the third line,

wherein the first portion of the third line crosses over the second line.

7. The semiconductor device according to claim 6, wherein the second portion of the third line overlaps with the second line.

8. The semiconductor device according to claim 6, wherein the first portion of the third line overlaps with the first line.

9. The semiconductor device according to claim 6, wherein the third line is formed over the first line.

10. The semiconductor device according to claim 6, wherein the third line comprises ITO.