Light emitting diode and method for fabricating the same
First Claim
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1. A light emitting device comprising:
- a light emitting structure having a first compound semiconductor layer, a second compound semiconductor layer and an active layer disposed between the first and second compound semiconductor layers and generating light, a portion of the first semiconductor layer being exposed;
a first electrode disposed on the exposed portion of the first semiconductor layer and a second electrode disposed on a top surface of the second semiconductor layer, respectively; and
a wavelength converting layer having first and second fluorescent layers sequentially formed on a first surface of the light emitting structure opposed to a second surface thereof on which the first and second electrodes formed, the first and second fluorescent layer converting a portion of the generated light to converted light having a different wavelength from the first light,wherein the first fluorescent layer has a different thicknesses from the second fluorescent layer,wherein each of the first and second fluorescent layers has a uniform thickness.
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Abstract
A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode.
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17 Claims
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1. A light emitting device comprising:
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a light emitting structure having a first compound semiconductor layer, a second compound semiconductor layer and an active layer disposed between the first and second compound semiconductor layers and generating light, a portion of the first semiconductor layer being exposed; a first electrode disposed on the exposed portion of the first semiconductor layer and a second electrode disposed on a top surface of the second semiconductor layer, respectively; and a wavelength converting layer having first and second fluorescent layers sequentially formed on a first surface of the light emitting structure opposed to a second surface thereof on which the first and second electrodes formed, the first and second fluorescent layer converting a portion of the generated light to converted light having a different wavelength from the first light, wherein the first fluorescent layer has a different thicknesses from the second fluorescent layer, wherein each of the first and second fluorescent layers has a uniform thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification