Electronic pH sensor die packaging
First Claim
Patent Images
1. A pH sensor comprising:
- a substrate including a base substrate and a cap formed over the base substrate;
an ion sensitive field effect transistor (ISFET) die comprising an ion sensing part that responds to pH, wherein the ISFET die is located over the substrate;
a protective layer formed over at least a first portion of an outer surface of the ISFET die and at least a portion of the substrate, wherein the protective layer is not formed over at least a second portion of the outer surface of the ISFET die;
a frit material formed at least partially in a sidewall region between the ISFET die and the cap, wherein the protective layer is formed over at least a portion of the frit material in the sidewall region and over at least a portion of the cap; and
a cover member mechanically coupled to the protective layer, wherein the cover member houses the ISFET die and the substrate, and wherein the cover member defines an opening proximate to the ion sensing part.
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Abstract
A pH sensor is provided. The pH sensor comprises a substrate and an ion sensitive field effect transistor (ISFET) die comprising an ion sensing part that responds to pH, wherein the ISFET die is located over the substrate. The pH sensor also comprises a protective layer formed over at least a portion of an outer surface of the ISFET die and at least a portion of the substrate. Further, the pH sensor comprises a cover member mechanically coupled to the protective layer, wherein the cover member houses the ISFET die and the substrate, and wherein the cover member defines an opening proximate to the ion sensing part.
23 Citations
15 Claims
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1. A pH sensor comprising:
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a substrate including a base substrate and a cap formed over the base substrate; an ion sensitive field effect transistor (ISFET) die comprising an ion sensing part that responds to pH, wherein the ISFET die is located over the substrate; a protective layer formed over at least a first portion of an outer surface of the ISFET die and at least a portion of the substrate, wherein the protective layer is not formed over at least a second portion of the outer surface of the ISFET die; a frit material formed at least partially in a sidewall region between the ISFET die and the cap, wherein the protective layer is formed over at least a portion of the frit material in the sidewall region and over at least a portion of the cap; and a cover member mechanically coupled to the protective layer, wherein the cover member houses the ISFET die and the substrate, and wherein the cover member defines an opening proximate to the ion sensing part. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A sensor device comprising:
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a substrate including a base substrate and a cap substrate formed over the base substrate; a field effect transistor (FET) die mounted over the substrate via a frit material, wherein the frit material is formed at least partially in a sidewall region between the FET die and the cap substrate; a protective layer formed over at least a first portion of an outer surface of the FET die, at least a portion of the frit material in the sidewall region, and at least partially over the cap substrate, wherein the protective layer is not formed over at least a second portion of the outer surface of the FET die; and at least one wire that is bonded to the FET die at a first end, wherein at least a portion of the wire is embedded in the frit material. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification