Trench type power transistor device

• US 8,536,646 B2
• Filed: 09/21/2011
• Issued: 09/17/2013
• Est. Priority Date: 09/21/2011
• Status: Active Grant

• Current Assignee: Sinopower Semiconductor, Inc.
• Original Assignee: Sinopower Semiconductor, Inc.
• Inventors: Yeh, Teng-Hao, Liao, Shian-Hau, Tai, Sung-Shan, Chen, Chia-Hui
• Primary Examiner(s): Landau, Matthew
• Assistant Examiner(s): RAMPERSAUD, PRIYA M
• Application Number:
  US13/237,940
• Publication Number:
  US 20130069143A1
• Time in Patent Office: 727 Days
• Field of Search: None
• US Class Current: 257/330
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/42372 characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out H01L29/42324 takes precedence
• CPC Class Codes: H01L 29/4238 characterised by the surface lay-out
• CPC Class Codes: H01L 29/66727 with a step of recessing the source electrode
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

The present invention provides a trench type power transistor device including a semiconductor substrate, at least one transistor cell, a gate metal layer, a source metal layer, and a second gate conductive layer. The semiconductor substrate has at least one trench. The transistor cell includes a first gate conductive layer disposed in the trench. The gate metal layer and the source metal layer are disposed on the semiconductor substrate. The second gate conductive layer is disposed between the first gate conductive layer and the source metal layer. The second gate conductive layer electrically connects the first gate conductive layer to the gate metal layer, and the second gate conductive layer is electrically insulated from the source metal layer and the semiconductor substrate.

Claims

1. A trench type power transistor device, comprising:

a semiconductor substrate of a first conductivity type, having an active region and a peripheral region, and the semiconductor substrate having at least one first trench;

at least one transistor cell, disposed in the active region, and the transistor cell comprising;

a first gate conductive layer, disposed in the first trench;

a gate insulating layer, disposed in the first trench and between the first gate conductive layer and the semiconductor substrate;

a doped body region of a second conductivity type, disposed in the semiconductor substrate at a side of the first trench; and

a doped source region of the first conductivity type, disposed in the doped body region;

a gate metal layer, disposed on the semiconductor substrate in the peripheral region;

a source metal layer, disposed on the semiconductor substrate in the active region; and

a second gate conductive layer, disposed between the first gate conductive layer and the source metal layer, and the second gate conductive layer partially overlapping the first gate conductive layer and the source metal layer in a direction perpendicular to the semiconductor substrate, wherein the second gate conductive layer electrically connects the first gate conductive layer to the gate metal layer, and the second gate conductive layer is electrically insulated from the source metal layer and the semiconductor substrate.

2. The trench type power transistor device according to claim 1, wherein the first trench is stripe-shaped, and the stripe-shaped first trench is disposed along a first direction.

3. The trench type power transistor device according to claim 2, wherein the second gate conductive layer comprises at least one stripe-shaped gate lead extending from the active region into the peripheral region, and the stripe-shaped gate lead is disposed along a second direction different from the first direction.

4. The trench type power transistor device according to claim 2, further comprising at least two second trenches arranged in the first direction and parallel to each other, wherein the at least one first trench comprises two first trenches parallel to each other, and each second trench connects the first trenches.

5. The trench type power transistor device according to claim 4, wherein the transistor cell is defined by the first trenches and the second trenches and is rectangular.

6. The trench type power transistor device according to claim 5, wherein the at least one transistor cell comprises a plurality of transistor cells, and the rectangular transistor cells arranged in a matrix formation.

7. The trench type power transistor device according to claim 1, further comprising a first insulating layer, disposed between the second gate conductive layer and the semiconductor substrate.

8. The trench type power transistor device according to claim 7, wherein the first insulating layer has at least one opening corresponding to the first trench, and the second gate conductive layer is filled into the opening.

9. The trench type power transistor device according to claim 7, wherein the first insulating layer has at least one opening corresponding to the first trench, and the first gate conductive layer is extended into the opening.

10. The trench type power transistor device according to claim 1, further comprising a second insulating layer, disposed between the second gate conductive layer and the source metal layer.

11. The trench type power transistor device according to claim 1, further comprising at least two contact plugs disposed on the transistor respectively at two sides of the second gate conductive layer for electrically connecting the doped source region to the source metal layer.

12. The trench type power transistor device according to claim 1, wherein the second gate conductive layer comprises silicide or polysilicon.