Data cells with drivers and methods of making and operating the same
First Claim
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1. A method, comprising:
- forming a plurality of trenches into semiconductive material of a substrate, and forming dielectric material in the trenches;
after forming the dielectric material in the trenches, etching into the semiconductive material to form a plurality of trench segments in the semiconductive material between the trenches; and
forming a plurality of fins, wherein the trench segments extend between pairs of adjacent fins but not between more than four fins.
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Abstract
Disclosed are methods and devices, among which is a device that includes a first semiconductor fin having a first gate, a second semiconductor fin adjacent the first semiconductor fin and having a second gate, and a third gate extending between the first semiconductor fin and the second semiconductor fin. In some embodiments, the third gate may not be electrically connected to the first gate or the second gate.
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Citations
18 Claims
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1. A method, comprising:
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forming a plurality of trenches into semiconductive material of a substrate, and forming dielectric material in the trenches; after forming the dielectric material in the trenches, etching into the semiconductive material to form a plurality of trench segments in the semiconductive material between the trenches; and forming a plurality of fins, wherein the trench segments extend between pairs of adjacent fins but not between more than four fins. - View Dependent Claims (2, 5, 7, 11, 12, 13, 14, 15, 16, 18)
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3. A method, comprising:
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forming a plurality of isolation trenches in a substrate; forming a plurality of trench segments between the isolation trenches; forming a plurality of fins, wherein the trench segments extend between pairs of adjacent fins but not between more than four fins; and forming column gates in the trench segments before forming the plurality of fins. - View Dependent Claims (4, 8, 10)
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6. A method, comprising:
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forming a plurality of trenches into semiconductive material of a substrate, and forming dielectric material in the trenches; after forming the dielectric material in the trenches, forming a plurality of trench segments into the semiconductive material between the trenches; forming a plurality of fins, wherein the trench segments extend between pairs of adjacent fins but not between more than four fins; and forming gates adjacent sides of the plurality of fins, wherein forming the gates comprises depositing conductive material over horizontal surfaces and adjacent sides of the plurality of fins, followed by anisotropically etching the conductive material to remove the conductive material from horizontal surfaces and leave the conductive material adjacent sides of the plurality of fins.
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9. A method, comprising:
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forming a plurality of trenches into semiconductive material of a substrate, and forming dielectric material in the trenches; after forming the dielectric material in the trenches, forming a plurality of trench segments into the semiconductive material between the trenches; and forming a plurality of fins, wherein the trench segments extend between pairs of adjacent fins but not between more than four fins, the trench segments individually having a bottom comprising semiconductive material, and comprising angle ion implanting into semiconductive material at the bottoms of the plurality of trench segments to suppress formation of parasitic devices.
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17. A method, comprising:
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forming a plurality of longitudinally elongated and parallel isolation trenches into semiconductive material of a substrate, and forming dielectric material in the trenches; after forming the dielectric material in the trenches, etching into the semiconductive material to form a plurality of longitudinally elongated and spaced trench segments in the semiconductive material between the trenches, the trench segments extending longitudinally parallel the isolation trenches; and forming a plurality of fins, wherein the trench segments extend between pairs of adjacent fins but not between more than four fins.
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Specification