Solid-state imaging device, imaging apparatus, and method for manufacturing solid-state imaging device
First Claim
1. A solid-state imaging device comprising:
- a substrate;
a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the plurality of photoelectric conversion elements being divided into a plurality of photoelectric conversion element groups;
a plurality of semiconductor substrates between the substrate and the plurality of photoelectric conversion elements, each of the plurality of semiconductor substrates corresponding to each of the plurality of photoelectric conversion element groups; and
a signal output section in the plurality of semiconductor substrates, wherein the signal output section outputs a signal corresponding to an electric charge generated in each photoelectric conversion elements of a photoelectric conversion element group corresponding to a semiconductor substrate;
wherein each of the photoelectric conversion elements includes a pixel electrode, an opposite electrode opposite to the pixel electrode, and a photoelectric conversion layer between the opposite electrode and the pixel electrode,a pad portion including a conductive member is provided on the plurality of semiconductor substrates and electrically connects to the pixel electrode of each photoelectric conversion element of the photoelectric conversion element group corresponding to each of the plurality of semiconductor substrates, and the signal output section is connected to the pad portion; and
wherein the opposite electrode is disposed above the pixel electrode and has a one-sheet configuration common to the plurality of photoelectric conversion elements,the photoelectric conversion layer has a one-sheet configuration common to the plurality of photoelectric conversion elements, andthe plurality of semiconductor substrates are horizontally in contact and adjacent to each other.
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Accused Products
Abstract
A solid-state imaging device is provided and includes: a substrate; a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the plurality of photoelectric conversion elements being divided into a plurality of photoelectric conversion element groups; a plurality of semiconductor substrates between the substrate and the plurality of photoelectric conversion elements, each of the plurality of semiconductor substrates corresponding to each of the plurality of photoelectric conversion element groups; and a signal output section in the plurality of semiconductor substrates. The signal output section outputs a signal corresponding to an electric charge generated in each photoelectric conversion elements of a photoelectric conversion element group corresponding to a semiconductor substrate.
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Citations
13 Claims
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1. A solid-state imaging device comprising:
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a substrate; a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the plurality of photoelectric conversion elements being divided into a plurality of photoelectric conversion element groups; a plurality of semiconductor substrates between the substrate and the plurality of photoelectric conversion elements, each of the plurality of semiconductor substrates corresponding to each of the plurality of photoelectric conversion element groups; and a signal output section in the plurality of semiconductor substrates, wherein the signal output section outputs a signal corresponding to an electric charge generated in each photoelectric conversion elements of a photoelectric conversion element group corresponding to a semiconductor substrate; wherein each of the photoelectric conversion elements includes a pixel electrode, an opposite electrode opposite to the pixel electrode, and a photoelectric conversion layer between the opposite electrode and the pixel electrode, a pad portion including a conductive member is provided on the plurality of semiconductor substrates and electrically connects to the pixel electrode of each photoelectric conversion element of the photoelectric conversion element group corresponding to each of the plurality of semiconductor substrates, and the signal output section is connected to the pad portion; and wherein the opposite electrode is disposed above the pixel electrode and has a one-sheet configuration common to the plurality of photoelectric conversion elements, the photoelectric conversion layer has a one-sheet configuration common to the plurality of photoelectric conversion elements, and the plurality of semiconductor substrates are horizontally in contact and adjacent to each other. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for manufacturing a solid-state imaging device including a substrate and a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the method comprising:
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forming a signal output section in each of a plurality of semiconductor substrates, for outputting signals corresponding to electric charges generated in the photoelectric conversion elements; forming a pad portion with a conductive material on each of the plurality of semiconductor substrates so that the pad portion is electrically connected to the signal output section; arraying the plurality of semiconductor substrates on the substrate in a state where the pad portion is located upward; and forming the photoelectric conversion elements each including a pixel electrode, a photoelectric conversion layer, and a opposite electrode, wherein the forming of the photoelectric conversion elements includes forming the pixel electrode on the pad portion of each of the plurality of semiconductor substrates, independently for every pad portion, forming the photoelectric conversion layer having a one-sheet configuration on the pixel electrode, and forming the opposite electrode having a one-sheet configuration on the photoelectric conversion layer; wherein the plurality of semiconductor substrates are horizontally in contact and adjacent to each other wherein the opposite electrode has a one-sheet configuration common to the plurality of photoelectric conversion elements and the photoelectric conversion layer has a one-sheet configuration common to the plurality of photoelectric conversion elements.
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13. A method for manufacturing a solid-state imaging device including a substrate and a plurality of photoelectric conversion elements arranged in a one-dimensional or two-dimensional array above the substrate, the method comprising:
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forming a signal output section in each of a plurality of semiconductor substrates, for outputting signals corresponding to electric charges generated in the photoelectric conversion elements; forming a pad portion with a conductive material on each of the plurality of semiconductor substrates so that the pad portion is electrically connected to the signal output section; arraying the plurality of semiconductor substrates on the substrate in a state where the pad portion is located upward; forming the plurality of photoelectric conversion elements each including a pixel electrode formed at a position corresponding to the pad portion of each of the plurality of semiconductor substrates, a photoelectric conversion layer that has a one-sheet configuration and is formed on the pixel electrode, and a opposite electrode that has a one-sheet configuration and is formed on the photoelectric conversion layer; and bonding the pad portion and the pixel electrode corresponding to the pad portion together; wherein the plurality of semiconductor substrates are horizontally in contact and adjacent to each other wherein the opposite electrode has a one-sheet configuration common to the plurality of photoelectric conversion elements and the photoelectric conversion layer has a one-sheet configuration common to the plurality of photoelectric conversion elements.
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Specification