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Method for evaluating oxide semiconductor and method for manufacturing semiconductor device

  • US 8,541,782 B2
  • Filed: 11/05/2010
  • Issued: 09/24/2013
  • Est. Priority Date: 11/06/2009
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising steps of:

  • forming a MOS capacitor having a transistor including an oxide semiconductor layer over a substrate;

    obtaining a C-V characteristic by plotting a relationship between a gate voltage Vg and a capacitance C of the MOS capacitor;

    obtaining a graph by plotting a relationship between the gate voltage Vg and (1/C)2 with the use of the C-V characteristic;

    calculating a carrier density Nd by obtaining a differential value of (1/C)2 in a weak inversion region in the graph and substituting the differential value into a mathematical formula;

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