High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
First Claim
Patent Images
1. A high power wide band-gap MOSFET-gated bipolar junction transistor (“
- MGT”
), comprising;
a first wide band-gap bipolar junction transistor (“
BJT”
) having a first collector, a first emitter and a first base;
a wide band-gap MOSFET having a source region that is configured to provide a current to the base of the first wide band-gap BJT; and
a second wide band-gap BJT having a second collector that is electrically connected to the first collector, a second emitter that is electrically connected to the first emitter, and a second base that is electrically connected to the first base so that the second wide band-gap BJT is connected in parallel to the first wide band-gap BJT,wherein the second base is thinner than the first base.
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Abstract
High power wide band-gap MOSFET-gated bipolar junction transistors (“MGT”) are provided that include a first wide band-gap bipolar junction transistor (“BJT”) having a first collector, a first emitter and a first base, a wide band-gap MOSFET having a source region that is configured to provide a current to the base of the first wide band-gap BJT and a second wide band-gap BJT having a second collector that is electrically connected to the first collector, a second emitter that is electrically connected to the first emitter, and a second base that is electrically connected to the first base.
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Citations
25 Claims
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1. A high power wide band-gap MOSFET-gated bipolar junction transistor (“
- MGT”
), comprising;a first wide band-gap bipolar junction transistor (“
BJT”
) having a first collector, a first emitter and a first base;a wide band-gap MOSFET having a source region that is configured to provide a current to the base of the first wide band-gap BJT; and a second wide band-gap BJT having a second collector that is electrically connected to the first collector, a second emitter that is electrically connected to the first emitter, and a second base that is electrically connected to the first base so that the second wide band-gap BJT is connected in parallel to the first wide band-gap BJT, wherein the second base is thinner than the first base. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
- MGT”
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15. A high power wide band-gap MOSFET-gated bipolar junction transistor (“
- MGT”
), comprising;a first silicon carbide (“
SiC”
) bipolar junction transistor (“
BJT”
) having a collector, an emitter and a base;a first SiC MOSFET having a source region that is configured to provide a current to the base of the SiC BJT; and a second SiC BJT in parallel with the first SiC BJT, wherein the second SiC BJT provides a non-destructive avalanche current path within an active area of the MGT. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24)
- MGT”
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25. A high power wide band-gap MOSFET-gated bipolar junction transistor (“
- MGT”
), comprising;an n-type bulk single crystal silicon carbide (“
SiC”
) substrate;an n-type SiC drift layer on the n-type conductivity bulk single crystal SiC substrate, the n-type drift layer having a first carrier concentration that is less than a second carrier concentration of the n-type SiC substrate; a patterned p-type SiC layer in the n-type SiC drift layer, the patterned p-type SiC layer including a base region and a source isolation region that includes a channel region that is spaced-apart from the base region; a patterned n-type SiC layer in the patterned p-type SiC layer, the patterned n-type SiC layer including a source region that is located in the source isolation region of the patterned p-type SiC layer and an emitter region in the base region of the patterned p-type SiC layer; an insulating layer on the source region, the channel region, and the n-type drift layer; a gate electrode on the insulating layer; and a collector contact on a surface of the SiC substrate opposite the n-type drift layer; an emitter contact on the emitter region of the patterned n-type SiC layer, wherein the source region is electrically connected to the base region, wherein the MGT further includes a second emitter region, and wherein the second emitter region extends deeper into the base region than does the first emitter region, and wherein a breakdown voltage of the MGT exceeds at least 5,000 volts.
- MGT”
Specification