LED with current confinement structure and surface roughening
First Claim
1. A light emitting diode having a vertical orientation, comprising:
- a top ohmic contact on portions of a top surface of said diode;
a reflective layer adjacent a semiconductor material layer of said diode;
a passivated portion embedded in, and completely surrounded by, said semiconductor material layer beneath said top ohmic contact that defines a less conductive area between said reflective layer and an active region of said diode; and
a roughened surface of said light emitting diode.
3 Assignments
0 Petitions
Accused Products
Abstract
A light emitting diode having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a reflective layer adjacent the light emitting region of the diode. This light emitting diode includes a confinement structure. The confinement structure may be an opening in the reflective layer generally beneath the top ohmic contact that defines a non-contact area between the reflective layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the areas not beneath said ohmic contact. The LED may include roughened emitting surfaces to further enhance light extraction.
83 Citations
12 Claims
-
1. A light emitting diode having a vertical orientation, comprising:
-
a top ohmic contact on portions of a top surface of said diode; a reflective layer adjacent a semiconductor material layer of said diode; a passivated portion embedded in, and completely surrounded by, said semiconductor material layer beneath said top ohmic contact that defines a less conductive area between said reflective layer and an active region of said diode; and a roughened surface of said light emitting diode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
Specification