×

Semiconductor device and structure

  • US 8,541,819 B1
  • Filed: 12/09/2010
  • Issued: 09/24/2013
  • Est. Priority Date: 12/09/2010
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first mono-crystal layer and a second mono-crystal layer and at least one conductive layer in-between;

    whereinsaid at least one conductive layer comprises a first conductive layer overlaying a second conductive layer overlying a third conductive layer, and whereinsaid second conductive layer having apredetermined second layer current carrying capacity greater than the current carrying capacity of said first conductive layer, and said second conductive layer current carrying capacity being greater than the current carrying capacity of said third conductive layer.

View all claims
  • 4 Assignments
Timeline View
Assignment View
    ×
    ×