Method and system for forming resonators over CMOS
First Claim
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1. A method of forming a microelectromechanical system (MEMS) device, comprising:
- forming a sacrificial layer over a substrate including one or more integrated circuits;
selectively patterning the sacrificial layer to form at least one gap;
forming a hinge layer over the patterned first sacrificial layer including within the at least one gap;
forming a bulk layer over the hinge layer including over the hinge layer within the at least one gap;
selectively patterning the bulk layer to define a resonator supported on the hinge layer and laterally spaced by at least one flexure portion of the hinge layer from at least one support post;
forming at least a portion of an electrode spaced from the resonator; and
removing remaining portions of the sacrificial layer, leaving the resonator supported by the at least one support post at the at least one flexure portion of the hinge layer;
whereby a changing electrostatic field generated by first and second electrical signals respectively communicated from the one or more integrated circuits to the electrode and to the resonator can drive an oscillation of the resonator at a resonance frequency along an axis.
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Abstract
In accordance with one embodiment of the present disclosure, a semiconductor substrate includes complementary metal-oxide-semiconductor (CMOS) circuitry disposed outwardly from the semiconductor substrate. An electrode is disposed outwardly from the CMOS circuitry. The electrode is electrically coupled to the CMOS circuitry. A resonator is disposed outwardly from the electrode. The resonator is operable to oscillate at a resonance frequency in response to an electrostatic field propagated, at least in part, by the electrode.
29 Citations
20 Claims
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1. A method of forming a microelectromechanical system (MEMS) device, comprising:
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forming a sacrificial layer over a substrate including one or more integrated circuits; selectively patterning the sacrificial layer to form at least one gap; forming a hinge layer over the patterned first sacrificial layer including within the at least one gap; forming a bulk layer over the hinge layer including over the hinge layer within the at least one gap; selectively patterning the bulk layer to define a resonator supported on the hinge layer and laterally spaced by at least one flexure portion of the hinge layer from at least one support post; forming at least a portion of an electrode spaced from the resonator; and removing remaining portions of the sacrificial layer, leaving the resonator supported by the at least one support post at the at least one flexure portion of the hinge layer; whereby a changing electrostatic field generated by first and second electrical signals respectively communicated from the one or more integrated circuits to the electrode and to the resonator can drive an oscillation of the resonator at a resonance frequency along an axis. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of forming a microelectromechanical system (MEMS) device, comprising:
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forming circuit elements over a substrate; forming and planarizing an oxide layer over the circuit elements; forming a conductive layer over the planarized oxide layer; selectively patterning the conductive layer to form first gaps to define laterally spaced first, second and third electrodes coupled for receiving electrical signals from the circuit elements; forming a sacrificial layer over the patterned conductive layer including within the first gaps; selectively patterning the sacrificial layer to form second gaps that expose respective surfaces of the first and third electrodes; forming a hinge layer over the patterned sacrificial layer including within the second gaps; forming a bulk layer over the hinge layer including over the hinge layer within the second gaps; selectively patterning the bulk layer to form third gaps to define a resonator laterally spaced by flexure portions of the hinge layer from first and second support posts; and removing remaining portions of the sacrificial layer, leaving the resonator supported between the support posts by the flexure portions of the hinge layer; whereby a changing electrostatic field generated by first and second electrical signals respectively communicated from the circuit elements to the first and third electrodes and to the second electrode can drive an oscillation of the resonator at a resonance frequency along an axis substantially perpendicular to the planarized oxide layer. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A microelectromechanical system (MEMS) device, comprising:
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circuit elements formed over a substrate; a general planar oxide layer formed over the circuit elements; a conductive layer formed over the oxide layer, the conductive layer defining laterally spaced first, second and third electrodes coupled for receiving electrical signals from the circuit elements; forming a sacrificial layer over the patterned conductive layer including within the first gaps; selectively patterning the sacrificial layer to form second gaps that expose respective surfaces of the first and third electrodes; a hinge layer formed over the conductive layer with a raised portion spaced above the second electrode by a gap supported between support post portions respectively contacting the first and third electrodes; a bulk layer formed over the hinge layer having a resonator portion defining laterally spaced resonator and support post portions, with the resonator portion supported by flexure portions of the hinge layer on the first and second support post portions; whereby a changing electrostatic field generated by first and second electrical signals respectively communicated from the circuit elements to the first and third electrodes and to the second electrode can drive an oscillation of the resonator at a resonance frequency along an axis substantially perpendicular to the planar oxide layer. - View Dependent Claims (19, 20)
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Specification