Semiconductor apparatus, method of manufacturing semiconductor apparatus, method of designing semiconductor apparatus, and electronic apparatus
First Claim
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1. A semiconductor device comprising:
- a first material layer adjacent to a second material layer, the first material layer including a two-dimensional array area having a plurality of units arranged in a two-dimensional array;
a first via passing through the first material layer and extending into the second material layer; and
a second via extending into the first material layer,wherein,along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, andthe first via and the second via are located within the two-dimensional array area.
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Abstract
A semiconductor device including a first material layer adjacent to a second material layer, a first via passing through the first material layer and extending into the second material layer, and a second via extending into the first material layer, where along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via.
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Citations
22 Claims
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1. A semiconductor device comprising:
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a first material layer adjacent to a second material layer, the first material layer including a two-dimensional array area having a plurality of units arranged in a two-dimensional array; a first via passing through the first material layer and extending into the second material layer; and a second via extending into the first material layer, wherein, along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, and the first via and the second via are located within the two-dimensional array area. - View Dependent Claims (2, 6, 7, 8, 9, 15, 16, 17, 18, 19, 20, 21)
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3. A semiconductor device comprising:
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a first material layer adjacent to a second material layer; a first via passing through the first material layer and extending into the second material layer; and a second via extending into the first material layer; wherein, along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, and the first via and the second via are filled with a conductive material.
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4. A semiconductor device comprising:
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a first material layer adjacent to a second material layer; a first via passing through the first material layer and extending into the second material layer; and a second via extending into the first material layer, a first insulating layer in the first material layer; and a second insulating layer in the second material layer, wherein, along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, the first via extends into the second insulating layer in the second material layer, the second via extends into the first insulating layer in the first material layer, and the first via reaches a second interconnect in the second insulating layer in the second material layer.
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5. A semiconductor device comprising:
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a first material layer adjacent to a second material layer; a first via passing through the first material layer and extending into the second material layer; a second via extending into the first material layer; a first insulating layer in the first material layer; and a second insulating layer in the second material layer, wherein, along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, the first via extends into the second insulating layer in the second material layer, the second via extends into the first insulating layer in the first material layer, and the second via reaches a first interconnect in the first insulating layer in the first material layer.
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10. A semiconductor device comprising:
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a first material layer adjacent to a second material layer; a first via passing through the first material layer and extending into the second material layer; and a second via extending into the first material layer, wherein, along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, and the device is a backside illuminated device.
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11. A semiconductor device comprising:
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a first material layer adjacent to a second material layer; a first via passing through the first material layer and extending into the second material layer; and a second via extending into the first material layer, wherein, along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, and the first material layer is a semiconductor layer.
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12. A semiconductor device comprising:
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a first material layer adjacent to a second material layer; a first via passing through the first material layer and extending into the second material layer; and a second via extending into the first material layer, wherein, along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, and the second material layer is a semiconductor layer.
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13. A solid state imaging device comprising:
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a first material layer adjacent to a second material layer, the first material layer including a two-dimensional array area having a plurality of units arranged in a two-dimensional array; a first via passing through the first material layer and extending into the second material layer; and a second via extending into the first material layer, wherein, along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, and the first via and the second via are located within the two-dimensional array area.
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14. An electronic apparatus comprising:
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a first material layer adjacent to a second material layer, the first material layer including a two-dimensional array area having a plurality of units arranged in a two-dimensional array; a first via passing through the first material layer and extending into the second material layer; and a second via extending into the first material layer, wherein, along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, and the first via and the second via are located within the two-dimensional array area.
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22. A semiconductor device comprising:
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a first material layer adjacent to a second material layer, the first material layer including a two-dimensional array area having a plurality of units arranged in a two-dimensional array; a first via passing through the first material layer and extending into the second material layer; a second via extending into the first material layer, a power terminal; and a ground terminal, wherein, along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, the semiconductor device is substantially rectangular in plan view, the first via and the second via are located within the two-dimensional array area, and the power and ground terminals are located in diagonally opposite corners of the substantially rectangular shape.
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Specification