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Semiconductor apparatus, method of manufacturing semiconductor apparatus, method of designing semiconductor apparatus, and electronic apparatus

  • US 8,541,878 B2
  • Filed: 03/17/2011
  • Issued: 09/24/2013
  • Est. Priority Date: 03/25/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first material layer adjacent to a second material layer, the first material layer including a two-dimensional array area having a plurality of units arranged in a two-dimensional array;

    a first via passing through the first material layer and extending into the second material layer; and

    a second via extending into the first material layer,wherein,along a common cross section parallel to an interface between the two material layers, the first via has a cross section larger than that of the second via, andthe first via and the second via are located within the two-dimensional array area.

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