Semiconductor device having shielded conductive vias
First Claim
1. A semiconductor device, comprisinga substrate composed of a semiconductor material;
- a conductive via, the conductive via includingan inner conductive layer surrounding a central axis of a through hole in the substrate;
a metal shielding layer surrounding the inner conductive layer and disposed on a side wall of the through hole directly contacting the semiconductor material of the substrate; and
an insulation material disposed between the inner conductive layer and the shielding layer;
wherein the inner conductive layer and the shielding layer are ring structures substantially coaxial to the central axis; and
a first metal layer disposed on a first surface of the substrate, the first metal layer contacting the metal shielding layer.
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Accused Products
Abstract
The present invention relates to a semiconductor device having a shielding layer. The semiconductor device includes a substrate, an inner metal layer, a shielding layer, an insulation material, a metal layer, a passivation layer and a redistribution layer. The inner metal layer is disposed in a through hole of the substrate. The shielding layer surrounds the inner annular metal. The insulation material is disposed between the inner metal layer and the shielding layer. The metal layer is disposed on a surface of the substrate, contacts the shielding layer and does not contact the inner metal layer. The redistribution layer is disposed in an opening of the passivation layer so as to contact the inner metal layer.
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Citations
14 Claims
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1. A semiconductor device, comprising
a substrate composed of a semiconductor material; -
a conductive via, the conductive via including an inner conductive layer surrounding a central axis of a through hole in the substrate; a metal shielding layer surrounding the inner conductive layer and disposed on a side wall of the through hole directly contacting the semiconductor material of the substrate; and an insulation material disposed between the inner conductive layer and the shielding layer; wherein the inner conductive layer and the shielding layer are ring structures substantially coaxial to the central axis; and a first metal layer disposed on a first surface of the substrate, the first metal layer contacting the metal shielding layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device, comprising
a substrate; -
a first conductive via including a shielding layer, a first inner conductive layer, and an insulation material, the shielding layer surrounding the first inner conductive layer, the first inner conductive layer surrounding a central axis of a first through hole in the substrate, and the insulation material disposed between the shielding layer and the first inner conductive layer; a second conductive via including a second inner conductive layer, the second inner conductive via disposed on a sidewall of a second through hole in the substrate; and a metal layer disposed on a surface of the substrate, the metal layer covering the second conductive via and contacting the shielding layer of the first conductive via and the second inner conductive layer of the second conductive via. - View Dependent Claims (11, 12, 13, 14)
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Specification