Method of manufacturing display device including thin film transistor
First Claim
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1. A method of manufacturing a display device, comprising:
- forming a thin film transistor, including;
forming a gate electrode on a substrate;
forming a gate insulating layer on the substrate having the gate electrode;
forming on the gate insulating layer an oxide semiconductor layer with a channel region, a source region and a drain region;
forming source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively,wherein the forming of the oxide semiconductor layer includes;
depositing ions including In, Ga, and Zn from a target to form a lower layer on the gate insulating layer, andforming an upper layer on the lower layer, the upper layer having an In concentration lower than the lower layer, andproviding a display panel with the thin film transistor.
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Abstract
A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.
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6 Claims
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1. A method of manufacturing a display device, comprising:
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forming a thin film transistor, including; forming a gate electrode on a substrate; forming a gate insulating layer on the substrate having the gate electrode; forming on the gate insulating layer an oxide semiconductor layer with a channel region, a source region and a drain region; forming source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the forming of the oxide semiconductor layer includes; depositing ions including In, Ga, and Zn from a target to form a lower layer on the gate insulating layer, and forming an upper layer on the lower layer, the upper layer having an In concentration lower than the lower layer, and providing a display panel with the thin film transistor. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification