Organic light-emitting display device and method of manufacturing the same

• US 8,546,175 B2
• Filed: 11/15/2012
• Issued: 10/01/2013
• Est. Priority Date: 10/27/2009
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Chung, Hyun-Joong, Park, Jin-Seong, Jeong, Jong-Han, Jeong, Jae-Kyeong, Mo, Yeon-Gon, Kim, Min-Kyu, Ahn, Tae-Kyung, Yang, Hui-Won, Kim, Kwang-Suk, Kim, Eun-Hyun, Kang, Jae-Wook, Im, Jae-Soon
• Primary Examiner(s): Huynh, Andy
• Application Number:
  US13/678,256
• Publication Number:
  US 20130109119A1
• Time in Patent Office: 320 Days
• Field of Search: 438/82, 438/99, 257/40, 257/642, 257/E51.001, 257/E51.005, 257/E51.024
• US Class Current: 438/82
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 2101/80 Composition varying spatially, e.g. having a spatial gradient
• CPC Class Codes: H10K 50/80 Constructional details
• CPC Class Codes: H10K 50/84 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/87 Passivation; Containers; Encapsulations
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass

Abstract

Disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

Claims

1. A method of manufacturing an organic light-emitting display device, the method comprising:

forming a gate electrode on a substrate;

forming a gate insulating layer covering the gate electrode on the substrate;

forming an active layer on the gate insulating layer;

forming an insulating layer covering a channel region of the active layer;

forming source and drain electrodes contacting the active layer and formed on the insulating layer; and

forming an organic light-emitting diode to be electrically connected to one of the source and drain electrodes,

wherein the forming of the insulating layer comprises;

forming a first insulating layer covering the channel region of the active layer; and

forming a second insulating layer from a metal oxide on the first insulating layer;

wherein the forming of the second insulating layer comprises;

forming a metal layer on the first insulating layer; and

thermal-processing at least the metal layer so as to form a part of the metal layer contacting the first insulating layer as a metal oxide.

2. The method of claim 1, wherein the second insulating layer has a gradient of metal content with respect to its thickness.

3. The method of claim 2, wherein the metal content decreases toward the first insulating layer.

4. The method of claim 2, wherein the metal content is substantially formed from aluminum, titanium or an alloy thereof.

5. The method of claim 1 further comprising forming a third insulating layer is substantially formed of a metal oxide or a metal nitride on the second insulating layer.

6. The method of claim 5, wherein the forming of the third insulating layer comprises:

forming a metal layer on the first insulating layer; and

forming a part of the metal layer as the third insulating layer by oxidizing or nitrifying a surface of the metal layer opposite of the first insulating layer.

7. The method of claim 5 further comprising forming a fourth insulating layer on the third insulating layer.

8. The method of claim 5, wherein the third insulating layer is substantially formed from aluminum oxide, aluminum nitride, titanium oxide or titanium nitride.

9. The method of claim 5, wherein a metal layer is formed between the second insulating layer and the third insulating layer.

10. The method of claim 9, wherein the metal layer is substantially formed from aluminum, titanium or an alloy thereof.

11. The method of claim 1, wherein the active layer is substantially formed of an oxide semiconductor.

12. The method of claim 1, wherein the first insulating layer is substantially formed of silicon oxide.