Semiconductor device and method for manufacturing the same

• US 8,546,210 B2
• Filed: 06/04/2010
• Issued: 10/01/2013
• Est. Priority Date: 11/22/2004
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tanaka, Koichiro, Isobe, Atsuo, Ohgarane, Daisuke, Yamazaki, Shunpei, Yamamoto, Yoshiaki
• Primary Examiner(s): Richards, N Drew
• Assistant Examiner(s): SINGAL, ANKUSH K
• Application Number:
  US12/794,120
• Publication Number:
  US 20100237354A1
• Time in Patent Office: 1,215 Days
• Field of Search: 438/197
• US Class Current: 438/197
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02683 Continuous wave laser beam
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2223/5442 comprising non digital, non alphanumeric information, e.g. symbols
• CPC Class Codes: H01L 2223/54426 for alignment
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29199 Material of the matrix
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29299 Base material
• CPC Class Codes: H01L 2224/293 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48464 : the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/83191 : wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/838 : Bonding techniques
• CPC Class Codes: H01L 2224/85 : using a wire connector
• CPC Class Codes: H01L 23/544 : Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 27/12 : the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 29/78603 : characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78648 : arranged on opposing sides of the channel
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01041 : Niobium [Nb]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01044 : Ruthenium [Ru]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/0106 : Neodymium [Nd]
• CPC Class Codes: H01L 2924/01072 : Hafnium [Hf]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01Q 1/38 : formed by a conductive layer on an insulating support patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142
• CPC Class Codes: H01Q 23/00 : Antennas with active circuits or circuit elements integrated within them or attached to them
• CPC Class Codes: H01Q 9/285 : Planar dipole H01Q9/065 takes precedence; patch antenna H01Q9/0407
• CPC Class Codes: Y10S 438/982 : Varying orientation of devices in array

Abstract

It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.

Claims

1. A semiconductor device comprising:

a layer having a first thin film transistor and a second thin film transistor, the first thin film transistor having a semiconductor film and a gate electrode;

a source or drain electrode connected to the semiconductor film of the first thin film transistor, the source or drain electrode being formed in a first opening;

a wiring connected to the source or drain electrode, the wiring being formed in a second opening portion provided between the first thin film transistor and the second thin film transistor;

a substrate; and

a conductive film provided over the substrate;

wherein the wiring and the conductive film are electrically connected to each other by pasting the layer having the first and second thin film transistors and the substrate to each other.

2. The semiconductor device according to claim 1, wherein the substrate is a film substrate.

3. The semiconductor device according to claim 1, wherein at least one of the first and second thin film transistors has a semiconductor film having a thickness of 40 to 170 nm.

4. The semiconductor device according to claim 1, wherein the gate electrode is provided over the semiconductor film.

5. A semiconductor device comprising:

a layer having a first thin film transistor and a second thin film transistor, the first thin film transistor having a semiconductor film;

a source or drain electrode connected to the semiconductor film of the first thin film transistor, the source or drain electrode being formed in a first opening;

a wiring connected to the source or drain electrode, the wiring being formed in a plurality of second openings provided between the first thin film transistor and the second thin film transistor;

a substrate; and

a conductive film provided over the substrate;

wherein the wiring and the conductive film are electrically connected to each other by pasting the layer having the first and second thin film transistors and the substrate to each other.

6. The semiconductor device according to claim 5, wherein the substrate is a film substrate.

7. The semiconductor device according to claim 5, wherein at least one of the first and second thin film transistors has a semiconductor film having a thickness of 40 to 170 nm.

8. The semiconductor device according to claim 5, further comprising:

a gate electrode over the semiconductor film.

9. A semiconductor device comprising:

a layer having a first thin film transistor and a second thin film transistor, the first thin film transistor having a semiconductor film and a gate electrode;

a source or drain electrode connected to the semiconductor film of the first thin film transistor, the source or drain electrode being formed in a first opening;

a wiring connected to the source or drain electrode, the wiring being formed in a second opening portion provided between the first thin film transistor and the second thin film transistor;

a substrate; and

a conductive film provided over the substrate;

wherein the wiring and the conductive film are electrically connected to each other via an adhesive layer.

10. The semiconductor device according to claim 9, wherein the substrate is a film substrate.

11. The semiconductor device according to claim 9, wherein at least one of the first and second thin film transistors has a semiconductor film having a thickness of 40 to 170 nm.

12. The semiconductor device according to claim 9, wherein the adhesive layer comprises an adhesive agent and conductive particles.

13. A semiconductor device comprising:

a layer having a first thin film transistor and a second thin film transistor, the first thin film transistor having a semiconductor film;

a source or drain electrode connected to the semiconductor film of the first thin film transistor, the source or drain electrode being formed in a first opening;

a wiring connected to the source or drain electrode, the wiring being formed in a plurality of second openings provided between the first thin film transistor and the second thin film transistor;

a substrate; and

a conductive film provided over the substrate;

wherein the wiring and the conductive film are electrically connected to each other via an adhesive layer.

14. The semiconductor device according to claim 13, wherein the substrate is a film substrate.

15. The semiconductor device according to claim 13, wherein at least one of the first and second thin film transistors has a semiconductor film having a thickness of 40 to 170 nm.

16. The semiconductor device according to claim 13, wherein the adhesive layer comprises an adhesive agent and conductive particles.