Method for manufacturing semiconductor device

• US 8,546,225 B2
• Filed: 04/21/2011
• Issued: 10/01/2013
• Est. Priority Date: 04/23/2010
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): Garber, Charles
• Assistant Examiner(s): Stevenson, Andre C
• Application Number:
  US13/091,192
• Publication Number:
  US 20110263083A1
• Time in Patent Office: 894 Days
• Field of Search: 438/287, 438/104
• US Class Current: 438/287
• CPC Class Codes: G11C 16/0433 comprising cells containing a single floating gate transistor and one or more separate select transistors
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 28/40 Capacitors
• CPC Class Codes: H10B 41/00 Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
• CPC Class Codes: H10B 41/70 the floating gate being an electrode shared by two or more components
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

An embodiment of the disclosed invention is a method for manufacturing a semiconductor device, which includes the steps of forming a first insulating film; forming a source electrode, a drain electrode, and an oxide semiconductor film electrically connected to the source electrode and the drain electrode, over the first insulating film; performing heat treatment on the oxide semiconductor film to remove a hydrogen atom in the oxide semiconductor film; forming a second insulating film over the oxide semiconductor film; performing oxygen doping treatment on the second insulating film to supply an oxygen atom to the second insulating film; and forming a gate electrode in a region overlapping with the oxide semiconductor film, over the second insulating film.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first insulating film;

forming a source electrode, a drain electrode, and an oxide semiconductor film over the first insulating film, wherein the oxide semiconductor film is electrically connected to the source electrode and the drain electrode;

performing first oxygen doping treatment on the oxide semiconductor film;

forming a second insulating film over the oxide semiconductor film;

performing second oxygen doping treatment on the second insulating film; and

forming a gate electrode over the oxide semiconductor film with the second insulating film interposed therebetween.

2. The method according to claim 1, wherein the oxide semiconductor film is formed over the source electrode and the drain electrode.

3. The method according to claim 1, wherein the source electrode and the drain electrode are formed over the oxide semiconductor film.

4. The method according to claim 1, further comprising a step of forming a third insulating film over the gate electrode.

5. The method according to claim 1, further comprising the step of forming a fourth insulating film,

wherein the first insulating film is formed over the fourth insulating film,

and

wherein the first insulating film comprises a component which is the same as that of the oxide semiconductor film.

6. The method according to claim 1, further comprising the step of forming a fourth insulating film,

wherein the first insulating film is formed over the fourth insulating film,

wherein the first insulating film comprises a component which is the same as that of the oxide semiconductor film, and

wherein the fourth insulating film comprises a component which is different from that of the oxide semiconductor film.

7. The method according to claim 1, further comprising the step of forming a fourth insulating film over the second insulating film,

wherein the second insulating film comprises a component which is the same as that of the oxide semiconductor film.

8. The method according to claim 1, further comprising the step of forming a fourth insulating film over the second insulating film,

wherein the second insulating film comprises a component which is the same as that of the oxide semiconductor film, and

wherein the fourth insulating film comprises a component which is different from that of the oxide semiconductor film.

9. The method according to claim 1, wherein the oxide semiconductor film comprises gallium as a component.

10. The method according to claim 1, wherein the oxide semiconductor film comprises indium, gallium, and zinc.

11. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first gallium oxide film;

forming a source electrode, a drain electrode, and an oxide semiconductor film over the first gallium oxide film, wherein the oxide semiconductor film is electrically connected to the source electrode and the drain electrode;

performing first oxygen doping treatment on the oxide semiconductor film;

forming a second gallium oxide film over the oxide semiconductor film;

performing second oxygen doping treatment on the second gallium oxide film; and

forming a gate electrode over the oxide semiconductor film with the second gallium oxide film interposed therebetween.

12. The method according to claim 11, wherein the oxide semiconductor film is formed over the source electrode and the drain electrode.

13. The method according to claim 11, wherein the source electrode and the drain electrode are formed over the oxide semiconductor film.

14. The method according to claim 11, further comprising a step of forming a third insulating film over the gate electrode.

15. The method according to claim 11, further comprising the step of forming a first insulating film, wherein the first gallium oxide film is formed over the first insulating film.

16. The method according to claim 11, further comprising the step of forming a first insulating film,

wherein the first gallium oxide film is formed over the first insulating film, and

wherein the first insulating film comprises a component which is different from that of the oxide semiconductor film.

17. The method according to claim 11, further comprising the step of forming a second insulating film over the second gallium oxide film.

18. The method according to claim 11, further comprising the step of forming a second insulating film over the second gallium oxide film,

wherein the second insulating film comprises a component which is different from that of the oxide semiconductor film.

19. The method according to claim 11, wherein the oxide semiconductor film comprises gallium as a component.

20. The method according to claim 11, wherein the oxide semiconductor film comprises indium, gallium, and zinc.

21. The method according to claim 11, further comprising the step of performing heat treatment on the oxide semiconductor film.

22. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first insulating film;

forming a source electrode, a drain electrode, and an oxide semiconductor film over the first insulating film, wherein the oxide semiconductor film is electrically connected to the source electrode and the drain electrode;

performing heat treatment on the oxide semiconductor film;

performing first oxygen doping treatment on the oxide semiconductor film;

forming a second insulating film over the oxide semiconductor film;

performing second oxygen doping treatment on the second insulating film; and

forming a gate electrode over the oxide semiconductor film with the second insulating film interposed therebetween.

23. The method according to claim 22, wherein the oxide semiconductor film is formed over the source electrode and the drain electrode.

24. The method according to claim 22, wherein the source electrode and the drain electrode are formed over the oxide semiconductor film.

25. The method according to claim 22, further comprising a step of forming a third insulating film over the gate electrode.

26. The method according to claim 22,

wherein the first insulating film comprises a fourth insulating film and a fifth insulating film over the fourth insulating film, and

wherein the fifth insulating film comprises a component which is the same as that of the oxide semiconductor film.

27. The method according to claim 22,

wherein the first insulating film comprises a fourth insulating film and a fifth insulating film over the fourth insulating film,

wherein the fifth insulating film comprises a component which is the same as that of the oxide semiconductor film, and

wherein the fourth insulating film comprises a component which is different from that of the oxide semiconductor film.

28. The method according to claim 22,

wherein the second insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film, and

wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film.

29. The method according to claim 22,

wherein the second insulating film comprises a sixth insulating film and a seventh insulating film over the sixth insulating film,

wherein the sixth insulating film comprises a component which is the same as that of the oxide semiconductor film, and

wherein the seventh insulating film comprises a component which is different from that of the oxide semiconductor film.

30. The method according to claim 22, wherein the oxide semiconductor film comprises gallium as a component.

31. The method according to claim 22, wherein the oxide semiconductor film comprises indium, gallium, and zinc.