Integrated circuits including metal-insulator-metal capacitors and methods of forming the same
First Claim
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1. An integrated circuit comprising:
- a substrate;
a first metal-insulator-metal (MIM) capacitor disposed over the substrate, the MIM capacitor comprising;
a first metallic capacitor plate disposed over the substrate;
at least one first insulator layer disposed over the first metallic capacitor plate; and
a second metallic capacitor plate disposed over the at least one first insulator layer; and
at least one first dielectric layer, wherein at least a portion of the at least one first dielectric layer is disposed between the first metallic capacitor plate and the at least one first insulator layer;
wherein the at least one first dielectric layer includes a first portion and a second portion, the first portion is between the first metallic capacitor plate and the at least one first insulator layer, the second portion is not covered by the at least one first insulator layer, and the first portion is thicker than the second portion.
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Abstract
An integrated circuit includes a substrate and a first metal-insulator-metal (MIM) capacitor disposed over the substrate. The MIM capacitor includes a first metallic capacitor plate disposed over the substrate. At least one first insulator layer is disposed over the first metallic capacitor plate. A second metallic capacitor plate is disposed over the at least one first insulator layer. At least one first dielectric layer is disposed over the substrate. At least a portion of the at least one first dielectric layer is disposed between the first metallic capacitor plate and the at least one first insulator layer.
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Citations
20 Claims
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1. An integrated circuit comprising:
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a substrate; a first metal-insulator-metal (MIM) capacitor disposed over the substrate, the MIM capacitor comprising; a first metallic capacitor plate disposed over the substrate; at least one first insulator layer disposed over the first metallic capacitor plate; and a second metallic capacitor plate disposed over the at least one first insulator layer; and at least one first dielectric layer, wherein at least a portion of the at least one first dielectric layer is disposed between the first metallic capacitor plate and the at least one first insulator layer; wherein the at least one first dielectric layer includes a first portion and a second portion, the first portion is between the first metallic capacitor plate and the at least one first insulator layer, the second portion is not covered by the at least one first insulator layer, and the first portion is thicker than the second portion. - View Dependent Claims (2, 3, 4, 5)
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6. An integrated circuit comprising:
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a substrate; a first metal-insulator-metal (MIM) capacitor disposed over the substrate, the MIM capacitor comprising; a first metallic capacitor plate disposed over the substrate; at least one first insulator layer disposed over the first metallic capacitor plate; and a second metallic capacitor plate disposed over the at least one first insulator layer; at least one first dielectric layer, wherein at least a portion of the at least one first dielectric layer is disposed between the first metallic capacitor plate and the at least one first insulator layer; and a metallic resistor disposed over the substrate, wherein the metallic resistor having a metallic material as same as the first metallic capacitor plate. - View Dependent Claims (7, 8, 9, 10)
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11. An integrated circuit comprising:
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a substrate; a first metal-insulator-metal (MIM) capacitor disposed over the substrate, the MIM capacitor comprising; a first metallic capacitor plate disposed over the substrate; at least one first insulator layer disposed over the first metallic capacitor plate; and a second metallic capacitor plate disposed over the at least one first insulator layer; at least one first dielectric layer, wherein the at least one first dielectric layer includes a first portion and a second portion, the first portion is between the first metallic capacitor plate and the at least one first insulator layer, the second portion is not covered by the at least one first insulator layer, and the first portion is thicker than the second portion; and a metallic resistor disposed over the substrate, wherein the metallic resistor having a metallic material as same as the first metallic capacitor plate. - View Dependent Claims (12, 13, 14)
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15. A method of forming an integrated circuit, the method comprising:
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forming a first metallic material over a substrate; forming at least one first dielectric layer over the first metallic material; forming at least one first insulator material over the at least one first dielectric layer; forming a second metallic material over the at least one first insulator material; removing portions of the second metallic material and the at least one first insulator material so as to form a first metallic capacitor plate and at least one first insulator layer of a first MIM capacitor, wherein the removal process uses the at least one first dielectric layer as an etch stop layer; and removing a portion of the first metallic material so as to form a second metallic capacitor plate of the first MIM capacitor. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification