Mechanisms for forming copper pillar bumps using patterned anodes

• US 8,546,254 B2
• Filed: 08/19/2010
• Issued: 10/01/2013
• Est. Priority Date: 08/19/2010
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lu, Wen-Hsiung, Cheng, Ming-Da, Lin, Chih-Wei, Liu, Chung-Shi
• Primary Examiner(s): Roman, Angel
• Application Number:
  US12/859,379
• Publication Number:
  US 20120043654A1
• Time in Patent Office: 1,139 Days
• Field of Search: 438/614, 257/E21.479
• US Class Current: 438/614
• CPC Class Codes: C25D 17/12 Shape or form C25D17/14 takes precedence
• CPC Class Codes: C25D 5/022 using masking means
• CPC Class Codes: C25D 5/10 Electroplating with more than one layer of the same or of different metals for bearings C25D7/10
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 21/76885 By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/0361 Physical or chemical etching
• CPC Class Codes: H01L 2224/03912 the bump being used as a mask for patterning the bonding area
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05027 the internal layer extending out of an opening
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05187 Ceramics, e.g. crystalline carbides, nitrides or oxides glass ceramics H01L2224/05188
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/06102 the bonding areas being at different heights
• CPC Class Codes: H01L 2224/1145 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/11452 Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/11462 : Electroplating
• CPC Class Codes: H01L 2224/11464 : Electroless plating
• CPC Class Codes: H01L 2224/1147 : using a lift-off mask
• CPC Class Codes: H01L 2224/11823 : Immersion coating, e.g. in a solder bath
• CPC Class Codes: H01L 2224/11825 : Plating, e.g. electroplating, electroless plating
• CPC Class Codes: H01L 2224/11912 : the bump being used as a mask for patterning other parts
• CPC Class Codes: H01L 2224/13005 : Structure
• CPC Class Codes: H01L 2224/13022 : the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13083 : Three-layer arrangements
• CPC Class Codes: H01L 2224/13109 : Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13164 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/13562 : On the entire exposed surface of the core
• CPC Class Codes: H01L 2224/13582 : Two-layer coating
• CPC Class Codes: H01L 2224/13611 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/1403 : Bump connectors having different sizes, e.g. different diameters, heights or widths
• CPC Class Codes: H01L 2224/141 : Disposition
• CPC Class Codes: H01L 2224/742 : Apparatus for manufacturing bump connectors
• CPC Class Codes: H01L 2224/81193 : wherein the bump connectors are disposed on both the semiconductor or solid-state body and another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81194 : Lateral distribution of the bump connectors
• CPC Class Codes: H01L 23/525 : with adaptable interconnections
• CPC Class Codes: H01L 23/53238 : Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01038 : Strontium [Sr]
• CPC Class Codes: H01L 2924/0104 : Zirconium [Zr]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01073 : Tantalum [Ta]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01327 : Intermediate phases, i.e. intermetallics compounds
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits

Abstract

The mechanisms of preparing bump structures described by using patterned anodes may simplify bump-making process, reduce manufacturing cost, and improve thickness uniformity within die and across the wafer. In addition, the mechanisms described above allow forming bumps with different heights to allow bumps to be integrated with elements on a substrate with different heights. Bumps with different heights expand the application of copper post bumps to enable further chip integration.

Claims

1. A method of making a plurality of bump structures on a substrate, comprising:

immersing a substrate in a first plating bath, wherein the substrate is coupled to a cathode; and

plating a first metal layer in openings of a plurality of bump structures, wherein

the openings are lined with an under bump metallurgy (UBM) layer,

the first metal layer is part of the plurality of bump structures, and

a first anode in the first plating bath is patterned to deposit the first metal layer in the openings of the plurality of bump structures.

2. The method of claim 1, further comprising:

immersing the substrate in a second plating bath;

plating a second metal layer on the first metal layer to form the plurality of bump structures, wherein a second anode in the second plating bath is patterned to deposit the second metal layer;

immersing the substrate in a third plating bath; and

plating a third metal layer on the second metal layer to form the plurality of bump structures, wherein a third anode in the second plating bath is patterned to deposit the third metal layer.

3. The method of claim 1, wherein the first anode is made of the same metal as the first metal layer and is patterned with a photoresist layer leaving openings facing the plurality of bump structures.

4. The method of claim 2, wherein the second anode and the third anode are made of the same metal as the second metal layer and the third metal layer respectively and is each patterned with a photoresist layer leaving openings facing the plurality of bump structures.

5. The method of claim 1, wherein

the anode and the substrate are pulled apart during plating, and

a rate of the anode and the substrate being pulled apart affects shapes of the plurality of bump structures.

6. The method of claim 5, wherein the higher the rate the higher the tangential angle of the first metal layer.

7. The method of claim 1, wherein the first metal layer contains copper and a thickness of the first metal layer is greater than 30 μ

m.

8. The method of claim 1, wherein plating rate of the first metal layer is between about 0.01 mm/min to about 6.0 mm/min.

9. The method of claim 1, wherein a voltage between the anode and the cathode is between about 0.1 V and 10 V.

10. The method of claim 1, wherein the first anode and the substrate is pulled apart at a rate between 0.01 μ

m/min to about 1 cm/min.

11. The method of claim 2, wherein the second metal layer is made of a material selected from a group consisting of nickel, tin, tine-lead, gold, silver, palladium, indium, nickel-palladium-gold, nickel-gold or other alloys of above-mentioned elements.

12. The method of claim 2, wherein the third metal layer is made of lead-free solder.

13. A method of making a plurality of bump structures with different heights on a substrate, comprising:

immersing a substrate in a first plating bath, wherein the substrate is coupled to a cathode;

plating a first metal layer in openings of a plurality of bump structures, wherein

the first metal layer is made of a first metal type,

the first metal layer is part of plurality of bump structures, and

a first anode in the first plating bath is patterned to deposit the first metal layer in the openings of the plurality of bump structures; and

plating a second metal layer on a portion of the plurality of bump structures, wherein

the second metal layer is made of the first metal type,

the second metal layer is part of the portion of the plurality of bump structures,

a second anode is used to plate the second metal layer and the second anode is patterned to deposit the second metal layer in the openings of the portion of the plurality of bump structures, and

the portion of the plurality of bump structures deposited with the second metal layer has higher thickness than the other portion not deposited with the second metal layer.

14. The method of claim 13, wherein plating the second metal layer is performed in the first plating bath or in a second plating bath.

15. The method of claim 13, wherein the first metal layer contains copper and bump of the plurality of bump structures have one of two different heights.

16. A method of making a plurality of bump structures on a substrate, comprising:

immersing a substrate in a first plating bath, wherein the substrate is coupled to a cathode;

plating a first metal layer in openings of a plurality of bump structures, wherein

the openings are lined with an under bump metallurgy (UBM) layer,

the first metal layer is part of the plurality of bump structures, and

a first anode in the first plating bath is patterned to deposit the first metal layer in the openings of the plurality of bump structures; and

moving the first anode away from the substrate during the plating the first metal layer, wherein a distance between the first anode and the substrate remains within a range from about 0.1 mm to about 10 cm.

17. The method of claim 16, wherein the moving the first anode comprises moving the anode at a different rate depending on a deposition time.

18. The method of claim 16, further comprising:

immersing the substrate in a second plating bath;

plating a second metal layer on the first metal layer to form the plurality of bump structures, wherein a second anode in the second plating bath is patterned to deposit the second metal layer; and

moving the second anode away from the substrate during the plating the second metal layer, wherein a distance between the second anode and the substrate remains within a range from about 0.1 mm to about 10 cm.

19. The method of claim 18, further comprising:

immersing the substrate in a third plating bath;

plating a third metal layer on the second metal layer to form the plurality of bump structures, wherein a third anode in the third plating bath is patterned to deposit the third metal layer; and

moving the third anode away from the substrate during the plating the second metal layer, wherein a distance between the third anode and the substrate remains within a range from about 0.1 mm to about 10 cm.

20. The method of claim 16, wherein plating the first metal layer in the openings comprises plating a metal dispersed in the first plating bath and the first anode does not dissolve in the first plating bath.