Etching radical controlled gas chopped deep reactive ion etching

• US 8,546,264 B2
• Filed: 06/02/2006
• Issued: 10/01/2013
• Est. Priority Date: 06/02/2005
• Status: Active Grant

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Olynick, Deirdre, Rangelow, Ivo, Chao, Weilun
• Primary Examiner(s): Deo, Duy
• Assistant Examiner(s): Dahimene, Mahmoud
• Application Number:
  US11/421,958
• Publication Number:
  US 20070015371A1
• Time in Patent Office: 2,678 Days
• Field of Search: 438/706, 438/700, 438/712, 216/58, 216/66
• US Class Current: 438/712
• CPC Class Codes: H01L 21/30655 comprising alternated and repeated etching and passivation steps, e.g. Bosch process

Abstract

A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH₄ and controlling the passivation rate and stoichiometry using a CF₂ source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

Claims

1. A method of etching radical reduced, gas chopped deep reactive ion etching comprising:

a) conditioning a chamber comprising;

i) discharging an etchant and a passivator in the chamber, wherein the passivator is polytetrafluoroethane (PTFE), and

ii) ionizing at least some of the etchant and passivator in a plurality of passivation-etching cycles;

such that the inside of the chamber comprises CF₂ and CF_x, wherein x is 1, 2, or 3, having a CF₂/CF_x ratio higher than if the chamber was not conditioned, wherein subsequent steps b) to d) take place inside said chamber;

b) etching a material using a means for gas chopped ion etching comprising;

i) the etchant; and

ii) the passivator;

c) ionizing at least some of the etchant and passivator of step b); and

d) controlling a concentration of radicals produced by the ionizing of the etchant;

such that a smooth sidewall is produced on the material being etched, wherein the smooth sidewall has a surface roughness of less than 5 nm RMS.

2. The method of claim 1, wherein the smooth sidewall has a surface roughness of less than 2 nm RMS.

3. The method of claim 2, wherein the smooth sidewall has a surface roughness of less than 1 nm RMS.

4. The method of claim 1 wherein the controlling step comprises:

providing a getter to reduce the concentration of radicals produced by the ionizing of the etchant.

5. The method of claim 4, wherein the getter comprises:

a source of hydrogen that reacts with radicals produced by the ionizing of the etchant, so as to render the etchant ineffective at etching.

6. The method of claim 4, wherein the getter comprises:

a source of hydrogen selected from the group consisting of;

i) hydrogen gas, forming gas, methane, butane, a hydrocarbon, a mixture of hydrogen gas and one or more inert gasses.

7. The method of claim 1, wherein the etchant comprises:

a chemically active etchant; and

a relatively nonreactive or inert moiety used in ion bombardment.

8. The method of claim 1, wherein the passivator comprises:

a gaseous vapor phase CF₂.

9. The method of claim 8, wherein the gaseous vapor phase CF₂ is evolved from a heated surface.

10. The method of claim 1, wherein the material comprises Al, Mo, Ti, Si, W or Cr.

11. The method of claim 10, wherein the smooth sidewall is of a feature having at least 70 nm in depth.

12. The method of claim 11, wherein the smooth sidewall is of a feature having at least 168 nm in depth.

13. The method of claim 1, wherein the smooth sidewall is of a feature having a depth to width ratio of about 15.

14. The method of claim 1, wherein the smooth sidewall is of a feature having an aspect ratio of at least 20.

15. The method of claim 1, wherein said conditioning comprises a dummy discharge of fluorocarbon plasma at a chamber wall temperature of over 50°

C.

16. The method of claim 15, wherein said conditioning comprises cycling through passivation-etching cycles.

17. The method of claim 16, wherein said conditioning comprises cycling through 10 to 40 passivation-etching cycles.

18. The method of claim 1, wherein during said etching the pressure inside the chamber ranges from 1 to 15 mT.

19. The method of claim 1, wherein the CF₂/CF_x ratio is 100 times higher than if the chamber was not conditioned.

20. The method of claim 19, wherein the CF₂/CF_x ratio is 1,000 times higher than if the chamber was not conditioned.