Systems and methods for color binning

• US 8,546,737 B2
• Filed: 10/28/2010
• Issued: 10/01/2013
• Est. Priority Date: 10/30/2009
• Status: Active Grant

• Current Assignee: InVisage Technologies, Inc. (Apple Inc.)
• Original Assignee: InVisage Technologies, Inc. (Apple Inc.)
• Inventors: Tian, Hui, Lee, Jess Jan Young, Della Nave, Pierre Henri Rene
• Primary Examiner(s): Bui Pho, Pascal M
• Application Number:
  US12/914,480
• Publication Number:
  US 20110101205A1
• Time in Patent Office: 1,069 Days
• Field of Search: 250/208.1, 250/226, 250/214.R, 250/214.1, 250/216, 348/268, 348/269, 348/272, 348/273, 348277-279, 348/281, 348/294, 257/225, 257/229, 257/230, 257/231, 257/233, 257/414, 257/428, 257/431, 257/432
• US Class Current: 250/208.1
• CPC Class Codes: H04N 2209/047 using multispectral pick-up elements
• CPC Class Codes: H04N 23/11 for generating image signals from visible and infrared light wavelengths
• CPC Class Codes: H04N 25/131 including elements passing infrared wavelengths
• CPC Class Codes: H04N 25/134 based on three different wavelength filter elements
• CPC Class Codes: H04N 25/135 based on four or more different wavelength filter elements
• CPC Class Codes: H04N 25/46 by combining or binning pixels
• CPC Class Codes: H04N 25/57 Control of the dynamic range
• CPC Class Codes: H04N 25/60 Noise processing, e.g. detecting, correcting, reducing or removing noise
• CPC Class Codes: H04N 25/70 SSIS architectures; Circuits associated therewith
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors

Abstract

In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.

Claims

1. An image sensor, comprising:

a semiconductor substrate;

a substantially continuous optically sensitive layer overlying the semiconductor substrate;

a first electrode in communication with a first pixel region of the substantially continuous optically sensitive layer;

a second electrode in communication with a second pixel region of the substantially continuous optically sensitive layer;

a third electrode in communication with a third pixel region of the substantially continuous optically sensitive layer, the third pixel region to collect charge substantially equal to the sum of the charge collected from the first pixel region and the charge collected from the second pixel region;

a pixel circuit for each pixel region, each pixel circuit comprising a charge store and a read out circuit for each subpixel region; and

circuitry alternately to enable;

a first mode, a non-binning full-resolution mode, in which photocharge generated in the substantially continuous optically sensitive layer corresponding to the first pixel region is to be collected into a first charge store, photocharge generated in the substantially continuous optically sensitive layer corresponding to the second pixel region is to be collected into a second charge store; and

a second mode, a binning mode, in which photocharge generated in the substantially continuous optically sensitive layer corresponding to the third pixel region is to be collected simultaneously into a third charge store, the third charge store having a higher capacitance than either the first charge store or the second charge store thereby providing a mode with a higher dynamic range.

2. The image sensor of claim 1, wherein a waveband for each subpixel is selected from the group consisting of red, green, blue, yellow, cyan, magenta, UV, and IR wavebands.

3. The image sensor of claim 1, further comprising a color filter overlying the first pixel region and the second pixel region.

4. The image sensor of claim 1, further comprising a single color filter having substantially the same spectral characteristics overlying both the first pixel region and also the second pixel region.

5. The image sensor of claim 1, further comprising:

a first color filter overlying the first pixel region; and

substantially no color filter overlying the second pixel region.

6. The image sensor of claim 1, further comprising:

a first color filter having a first spectral characteristic overlying the first pixel region; and

a second color filter having a second spectral characteristic overlying the second pixel region.

7. The image sensor of claim 1, wherein operating in the film-binning mode enables imaging with a higher signal-to-noise ratio compared to operating in an unbinned mode.

8. The image sensor of claim 1, wherein operating in the film-binning mode enables imaging with a higher in-scene dynamic range compared to operating in an unbinned mode.