×

Light emitting device and fabrication method thereof

  • US 8,546,819 B2
  • Filed: 09/16/2011
  • Issued: 10/01/2013
  • Est. Priority Date: 12/28/2006
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of fabricating a light emitting device having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer and an active layer interposed therebetween formed on a substrate, the method comprising:

  • forming the first conductivity-type semiconductor layer on the substrate, wherein the first conductivity-type semiconductor layer comprises a first portion and a second portion;

    forming an aluminum layer on the first portion of the first conductivity-type semiconductor layer;

    forming an anodic aluminum oxide (AAO) layer having a large number of holes formed therein by performing an anodizing treatment of the aluminum layer;

    etching and patterning the first portion of the first conductivity-type semiconductor layer using the aluminum layer with the large number of the holes as a shadow mask so that the first portion of the first conductivity-type semiconductor layer is etched, wherein the etched first portion comprises a plurality of scattering centers comprising an air layer, and the first portion is alternately arranged between each scattering center of the plurality of scattering centers;

    removing the aluminum layer from the first portion of the first conductivity-type semiconductor layer;

    forming the second portion of the first conductivity-type semiconductor layer on the first portion of the first conductivity-type semiconductor layer; and

    forming the active layer and the second conductivity-type semiconductor layer on the first portion of the first conductivity-type semiconductor layer and the plurality of scattering centers.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×