Charging protection device
First Claim
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1. A semiconductor device comprising:
- a silicon-on-insulator (SOI) substrate including a bulk silicon layer;
an active silicon layer on the SOI substrate;
a transistor formed in the active silicon layer, the transistor including source/drain regions; and
a diode formed in the active silicon layer, the diode including two active regions;
first, second, third, and fourth conductive contacts;
first and second metal lines;
wherein the first conductive contact connects the drain of the transistor with the first metal line, the second conductive contact connects one active region of the diode with the first metal line, the third conductive contact connects the second active region of the diode with the second metal line, and the fourth conductive contact connects the second metal line to the bulk silicon layer;
wherein, the drain region, active diode regions, and bulk silicon layer are electrically connected to form a charging protection device.
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Abstract
Shallow trench isolation silicon-on-insulator (SOI) devices are formed with improved charge protection. Embodiments include an SOI film diode and a P+ substrate junction as a charging protection device. Embodiments also include a conductive path from the SOI transistor drain, through a conductive contact, a metal line, a second conductive contact, an SOI diode, isolated from the transistor, a third conductive contact, a second conductive line, and a fourth conductive contact to a P+-doped substrate contact in the bulk silicon layer of the SOI substrate.
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Citations
10 Claims
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1. A semiconductor device comprising:
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a silicon-on-insulator (SOI) substrate including a bulk silicon layer; an active silicon layer on the SOI substrate; a transistor formed in the active silicon layer, the transistor including source/drain regions; and a diode formed in the active silicon layer, the diode including two active regions; first, second, third, and fourth conductive contacts; first and second metal lines; wherein the first conductive contact connects the drain of the transistor with the first metal line, the second conductive contact connects one active region of the diode with the first metal line, the third conductive contact connects the second active region of the diode with the second metal line, and the fourth conductive contact connects the second metal line to the bulk silicon layer; wherein, the drain region, active diode regions, and bulk silicon layer are electrically connected to form a charging protection device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification