Semiconductor device incorporating charge balancing
First Claim
1. A semiconductor device comprising:
- a semiconductor layer of a first conductivity type;
a semiconductor layer of a second conductivity type formed on the semiconductor layer of the first conductivity type, wherein the semiconductor layer of the second conductivity type is characterized by a first thickness;
a body layer of the second conductivity type extending a first predetermined distance into the semiconductor layer of the second conductivity type;
a plurality of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type, wherein each of the plurality of trenches comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced charge;
a plurality of control gates coupled to the semiconductor layer of the second conductivity type; and
a plurality of source regions of the first conductivity type coupled to the semiconductor layer of the second conductivity type; and
wherein the intentionally introduced charge comprises a spatially fixed charge;
the intentionally introduced charge comprises a net positive charge associated with cesium ions;
the dielectric material comprises a silicon oxide material;
wherein a pair of termination trenches extending through the body layer of the second conductivity type and the semiconductor layer of the second conductivity type.
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Accused Products
Abstract
A semiconductor device includes a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type formed thereon. The semiconductor layer of the second conductivity type is characterized by a first thickness. The semiconductor device includes a set of trenches having a predetermined depth and extending into the semiconductor layer of the second conductivity type, thereby defining interfacial regions disposed between the semiconductor layer of the second conductivity type and each of the trenches. The trenches comprises a distal portion consisting essentially of a dielectric material disposed therein and a proximal portion comprising the dielectric material and a gate material disposed interior to the dielectric material in the proximal portion of the trench. The semiconductor device further includes a source region coupled to the semiconductor layer of the second conductivity type.
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Citations
15 Claims
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1. A semiconductor device comprising:
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a semiconductor layer of a first conductivity type; a semiconductor layer of a second conductivity type formed on the semiconductor layer of the first conductivity type, wherein the semiconductor layer of the second conductivity type is characterized by a first thickness; a body layer of the second conductivity type extending a first predetermined distance into the semiconductor layer of the second conductivity type; a plurality of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type, wherein each of the plurality of trenches comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced charge; a plurality of control gates coupled to the semiconductor layer of the second conductivity type; and a plurality of source regions of the first conductivity type coupled to the semiconductor layer of the second conductivity type; and
wherein the intentionally introduced charge comprises a spatially fixed charge;
the intentionally introduced charge comprises a net positive charge associated with cesium ions;
the dielectric material comprises a silicon oxide material;
wherein a pair of termination trenches extending through the body layer of the second conductivity type and the semiconductor layer of the second conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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an N-type semiconductor layer; a P-type semiconductor layer formed on the N-type semiconductor layer, wherein the P-type semiconductor layer is characterized by a first thickness; a P-type body layer extending a first predetermined distance into the P-type semiconductor layer; a plurality of trenches extending a second predetermined distance into the P-type semiconductor layer, wherein each of the plurality of trenches comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced charge;
wherein the intentionally introduced charge is sufficient to invert at least a portion of the P-type semiconductor layer;a plurality of control gates coupled to the P-type semiconductor layer; and a plurality of N-type source regions coupled to the P-type semiconductor layer; and
wherein the intentionally introduced charge comprises a net positive charge associated with cesium ions. - View Dependent Claims (12, 13, 14, 15)
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Specification