System and method for observing threshold voltage variations

• US 8,547,131 B2
• Filed: 01/15/2010
• Issued: 10/01/2013
• Est. Priority Date: 04/03/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wang, Chung-Hsing, Chen, Chih-Chieh, Chen, Yi-Wei
• Primary Examiner(s): ISLA RODAS, RICHARD
• Application Number:
  US12/688,025
• Publication Number:
  US 20100253382A1
• Time in Patent Office: 1,355 Days
• Field of Search: 327/266, 324/762.09
• US Class Current: 324/762.09
• CPC Class Codes: G01R 31/2884 using dedicated test connectors, test elements or test circuits on the IC under test G01R31/2855 takes precedence
• CPC Class Codes: G01R 31/3187 Built-in tests
• CPC Class Codes: H03K 5/159 Applications of delay lines not covered by the preceding subgroups

Abstract

A system and method for observing threshold voltage variations are provided. A ring oscillator circuit comprises a plurality of inverters arranged in a sequential loop, a plurality of test circuits having devices under test, each coupled between a respective one of the inverters and a power supply. Each test circuit has a bypass field effect transistor (FET) having a first channel coupled between the power supply and a respective one of the inverters responsive to an individual enable signal, and a FET device under test having a second channel arranged in parallel to the first channel. A method is described for determining the threshold voltage of the device under test by disabling, for one of the inverters in the ring oscillator, the first FET device such that the device under test is coupled between the power supply and the respective inverter and affects the operating frequency of the ring oscillator.

Claims

1. A circuit comprising:

a plurality of inverters arranged in a sequential loop; and

a plurality of test circuits, with each test circuit coupled between a device power supply and a respective power supply node to a respective one of the inverters, each test circuit comprising;

a first field effect transistor (FET) having a first channel coupled between the respective power supply and the device power supply and receiving an enable signal on a gate terminal of the first FET; and

a second FET having a second channel coupled in parallel to the first channel and having a gate terminal coupled to the respective power supply;

wherein when the first FET is disabled by the enable signal, the voltage at the device power supply node to the inverter is changed due to the threshold voltage of the second FET.

2. The circuit of claim 1, wherein each first FET in each test circuit is controlled by an independent control signal.

3. The circuit of claim 1, wherein there are at least as many inverters in the plurality of inverters as there are test circuits in the plurality of test circuits.

4. The circuit of claim 1, wherein the first FET comprises a P-type FET (PFET) and the second FET comprises an N-type FET (NFET).

5. The circuit of claim 1, wherein the first FET comprises an N-type FET (NFET) and the second FET comprises a P-type FET (PFET).

6. The circuit of claim 1, further comprising a logic gate having a first input coupled to an output of one of the inverters in the plurality of inverters and a second input coupled to an enable control signal, the logic gate selectively turning on or off the circuit.

7. The circuit of claim 6, wherein the logic gate is a logic AND gate.

8. The circuit of claim 1, wherein there is an odd number of inverters in the plurality of inverters.

9. An integrated circuit comprising:

integrated circuitry disposed on a substrate, the integrated circuitry configured to perform defined operations; and

at least one ring oscillator disposed on the substrate, the ring oscillator configured to produce a clock signal at a frequency dependent on a configuration of elements in the ring oscillator, the ring oscillator comprising;

a plurality of inverters serially arranged in a loop, each receiving a virtual positive voltage supply and a virtual ground voltage supply;

a plurality of header test circuits each coupled to one of the plurality of inverters, each comprising a bypass transistor receiving an enable signal on a gate terminal and having a channel coupled between a positive voltage supply and the respective virtual voltage supply coupled to the respective one of the plurality of inverters and each further comprising a header transistor under test having a channel coupled between the positive voltage supply and the respective virtual voltage supply coupled to the respective one of the plurality of inverters; and

a plurality of footer test circuits each coupled to one of the plurality of inverters, each comprising a bypass transistor receiving an enable signal on a gate terminal and having a channel coupled between a ground voltage supply and the respective virtual ground voltage supply of the respective one of the plurality of inverters, and each further comprising a footer transistor under test having a channel coupled between the ground voltage supply and the respective virtual ground voltage supply of the respective one of the plurality of inverters;

wherein the frequency of oscillation of the ring oscillator may be affected by one of a header transistor under test and a footer transistor under test, responsive to the respective bypass transistor being disabled by the corresponding one of the enable signals.

10. The integrated circuit of claim 9, wherein the header transistors under test each comprise an N-type FET (NFET) and the header bypass transistors each comprise a P-type FET (PFET).

11. The integrated circuit of claim 9, wherein the footer transistors under test each comprise a P-type (PFET) and the footer bypass transistors each comprise an N-type FET (NFET).

12. The integrated circuit of claim 9, wherein each of the header test circuits and each of the footer test circuits is independently controlled by a respective enable signal.

13. The integrated circuit of claim 9, wherein the frequency of the ring oscillator correlates to the threshold voltage of a selected one of a header transistor under test and a footer transistor under test.

14. The integrated circuit of claim 9, wherein there is a plurality of ring oscillators disposed on the substrate, and wherein the ring oscillators are distributed over the surface of the substrate.