Linearizing field effect transistors in the OHMIC region

• US 8,547,156 B2
• Filed: 01/25/2012
• Issued: 10/01/2013
• Est. Priority Date: 01/25/2012
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Analog Devices, Inc.
• Inventors: Foroudi, Omid
• Primary Examiner(s): Nguyen, Long
• Assistant Examiner(s): SKIBINSKI, THOMAS S
• Application Number:
  US13/358,206
• Publication Number:
  US 20130187683A1
• Time in Patent Office: 615 Days
• Field of Search: 327/403, 327/404, 327/427, 327/430, 327/432, 327/437, 327/374, 327/376, 327/377, 327/419, 327/431, 327/308
• US Class Current: 327/308
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors

Abstract

Apparatus and methods are disclosed related to using one or more field effect transistors as a resistor. One such apparatus can include a field effect transistor (FET), averaging resistors and a bidirectional current source. The averaging resistors can apply an average of a voltage at the source of the FET and a voltage at the drain of the FET to the gate of the field effect transistor. The bidirectional current source can turn the FET on and off. The FET can operate in the ohmic region when on. Such an apparatus can improve the linearity of the FET as a resistor, for example, at lower frequencies near or at direct current (DC). In some implementations, the apparatus can include one or more current sources to remove an offset introduced by the bidirectional current source at the source and/or the drain of the FET.

Claims

1. An apparatus comprising:

a field effect transistor having a gate, a source, and a drain;

a first explicit resistor having a first end coupled to the drain and a second end coupled to the gate;

a second explicit resistor having a first end coupled to the source and a second end coupled to the gate; and

a bidirectional current source configured to selectively turn on the field effect transistor to the linear region of operation and selectively turn the field effect transistor off, wherein the bidirectional current source is configured to isolate the parasitic capacitances of the field effect transistor from alternating current (AC) ground.

2. The apparatus of claim 1, wherein the first explicit resistor and the second explicit resistor are configured to apply an averaging voltage to the gate, wherein the averaging voltage is indicative of an average of a voltage at the drain and a voltage at the source.

3. The apparatus of claim 2, wherein the first explicit resistor and the second explicit resistor are configured to allow the field effect transistor to operate linearly down to direct current (DC).

4. The apparatus of claim 2, wherein the first explicit resistor and the second explicit resistor are configured to allow the field effect transistor to operate linearly at frequencies less than or equal to approximately 300 kHz.

5. The apparatus of claim 1, wherein the first explicit resistor and the second explicit resistor are configured to reduce a difference between a DC voltage at the gate and an average of a DC voltage at the drain and a DC voltage at the source.

6. The apparatus of claim 1, further comprising a second current source configured to reduce a DC offset at the source, wherein the DC offset at the source is generated by the bidirectional current source.

7. The apparatus of claim 6, further comprising a third current source configured to reduce a DC offset at the drain, wherein the DC offset at the drain is generated by the bidirectional current source.

8. The apparatus of claim 7, wherein the second current source and the third current source are configured to prevent the field effect transistor from turning on when a relatively large voltage is applied to the drain.

9. The apparatus of claim 1, wherein a resistance of the first explicit resistor is approximately equal to a resistance of the second explicit resistor.

10. The apparatus of claim 1, wherein the field effect transistor is embodied in an attenuator, a rectifier, or a programmable filter.

11. The apparatus of claim 1, wherein the resistance of the first explicit resistor is at least 10 times greater than the effective resistance in parallel with the source and the drain of the field effect transistor.

12. The apparatus of claim 1, wherein an output impedance of the bidirectional current source is larger than an impedance of the first explicit resistor, and wherein a parasitic capacitance of the bidirectional current source is smaller than a sum of the parasitic capacitance of the gate to the source of the field effect transistor and the parasitic capacitance of the gate to the drain of the field effect transistor.

13. The apparatus of claim 1, wherein the first end of the first explicit resistor is directly connected to the drain of the field effect, and wherein the first end of the second explicit resistor is directly connected to the source of the field effect transistor.

14. An apparatus comprising:

a field effect transistor having a gate, a source, and a drain, wherein the field effect transistor is configured to operate in the linear region of operation when on;

averaging resistors configured to apply an averaging voltage to the gate of the field effect transistor at frequencies less than or equal to approximately 4 MHz, wherein the averaging voltage is indicative of an average of a voltage at the source of the field effect transistor and a voltage at the drain of the field effect transistor; and

a bidirectional current source configured to selectively turn on the field effect transistor to the linear region of operation and selectively turn the field effect transistor off, wherein an output impedance of the bidirectional current source is larger than an impedance of the averaging resistors.

15. The apparatus of claim 14, further comprising at least one current source configured to reduce a DC offset at the source and a DC offset at the drain.

16. A method of using a field effect transistor, the method comprising:

controlling activation of the field effect transistor with a bidirectional current source, the field effect transistor having a gate, a source, and a drain;

operating the field effect transistor in the ohmic region when the bidirectional current source activates the field effect transistor; and

applying an averaging voltage to the gate via explicit averaging resistors, wherein the averaging voltage is indicative of an average of a voltage at the drain and a voltage at the source, wherein a first resistor of the explicit averaging resistors is coupled to the drain, and wherein a second resistor of the explicit averaging resistors is coupled to the source.

17. The method of claim 16, wherein applying is performed at DC.

18. The method of claim 16, further comprising reducing a DC offset introduced at the source by the bidirectional current source.

19. The method of claim 18, wherein reducing is performed by at least one other current source.

20. The method of claim 16, further comprising reducing a DC offset introduced at the drain by the bidirectional current source.