Semiconductor device with indium or zinc layer in contact with oxide semiconductor layer and method for manufacturing the semiconductor device

• US 8,547,493 B2
• Filed: 10/06/2010
• Issued: 10/01/2013
• Est. Priority Date: 10/09/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Hiraishi, Suzunosuke, Akimoto, Kengo, Sakata, Junichiro
• Primary Examiner(s): Nguyen, Hoan C
• Application Number:
  US12/899,265
• Publication Number:
  US 20110084269A1
• Time in Patent Office: 1,091 Days
• Field of Search: 349/43, 349/42, 345/92, 257/43, 257/59, 257/72
• US Class Current: 349/42
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/45 Ohmic electrodes
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to reduce contact resistance between an oxide semiconductor layer and source and drain electrode layers electrically connected to the oxide semiconductor layer in a thin film transistor including the oxide semiconductor layer. The source and drain electrode layers have a stacked structure of two or more layers. In this stack of layers, a layer in contact with the oxide semiconductor layer is a thin indium layer or a thin indium-alloy layer. Note that the oxide semiconductor layer contains indium. A second layer or second and any of subsequent layers in the source and drain electrode layers are formed using an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, an alloy containing any of these elements as a component, an alloy containing any of these elements in combination, or the like.

Claims

1. A semiconductor device comprising:

a substrate having an insulating surface;

a gate electrode layer over the substrate having the insulating surface;

a gate insulating layer over the gate electrode layer;

an oxide semiconductor layer over the gate insulating layer;

a first metal layer on and in contact with the oxide semiconductor layer; and

a source electrode layer and a drain electrode layer over the first metal layer,

wherein the source electrode layer and the drain electrode layer are formed with a stack of layers, and

wherein the first metal layer is an indium layer or an indium-alloy layer.

2. The semiconductor device according to claim 1, wherein the oxide semiconductor layer contains indium oxide.

3. The semiconductor device according to claim 1, wherein the stack of layers comprises a second metal layer on and in contact with the first metal layer,

the second metal layer comprising an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, an alloy containing any of these elements as a component, or an alloy containing any of these elements in combination.

4. The semiconductor device according to claim 1, wherein the stack of layers comprises a second metal layer on and in contact with the first metal layer, the second metal layer comprising a light-transmitting conductive material.

5. The semiconductor device according to claim 4, wherein the light-transmitting conductive material is selected from indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide, indium zinc oxide, and indium tin oxide to which silicon oxide is added.

6. The semiconductor device according to claim 1, wherein the stack of layers comprises a first molybdenum layer, an aluminum layer, and a second molybdenum layer sequentially stacked over the first metal layer,

wherein the first molybdenum layer is on and in contact with the first metal layer.

7. A semiconductor device comprising:

a substrate having an insulating surface;

a gate electrode layer over the substrate having the insulating surface;

a gate insulating layer over the gate electrode layer;

an oxide semiconductor layer over the gate insulating layer;

a first metal layer on and in contact with the oxide semiconductor layer;

a source electrode layer and a drain electrode layer over the first metal layer,

wherein the source electrode layer and the drain electrode layer are formed with a stack of layers,

wherein the first metal layer is a zinc layer or a zinc-alloy layer.

8. The semiconductor device according to claim 7, wherein the oxide semiconductor layer contains zinc oxide.

9. The semiconductor device according to claim 7, wherein the stack of layers comprises a second metal layer on and in contact with the first metal layer,

the second metal layer comprising an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, an alloy containing any of these elements as a component, or an alloy containing any of these elements in combination.

10. The semiconductor device according to claim 7, wherein the stack of layers comprises a second metal layer on and in contact with the first metal layer, the second metal layer comprising a light-transmitting conductive material.

11. The semiconductor device according to claim 10, wherein the light-transmitting conductive material is selected from indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide, indium zinc oxide, and indium tin oxide to which silicon oxide is added.

12. The semiconductor device according to claim 7, wherein the stack of layers comprises a first molybdenum layer, an aluminum layer, and a second molybdenum layer sequentially stacked over the first metal layer,

wherein the first molybdenum layer is on and in contact with the first metal layer.

13. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate having an insulating surface;

forming a gate insulating layer over the gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer;

forming a first metal layer on and in contact with the oxide semiconductor layer;

forming a stack of metal conductive layers over the first metal layer; and

etching the first metal layer and the stack of metal conductive layers, so that a source electrode layer and a drain electrode layer are formed,

wherein the first metal layer is an indium layer or an indium-alloy layer.

14. The method for manufacturing the semiconductor device according to claim 13, wherein the stack is formed without being exposed to the air.

15. The method for manufacturing the semiconductor device according to claim 13, wherein the oxide semiconductor layer contains indium oxide.

16. The method for manufacturing the semiconductor device according to claim 13, wherein the metal conductive layers are formed using metal layer of an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, an alloy containing any of these elements as a component, or an alloy containing any of these elements in combination.

17. The method for manufacturing the semiconductor device according to claim 13, wherein the metal conductive layers are formed using a light-transmitting conductive material.

18. The method for manufacturing the semiconductor device according to claim 17, wherein the light-transmitting conductive material is selected from indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide, indium zinc oxide, and indium tin oxide to which silicon oxide is added.

19. The method for manufacturing the semiconductor device according to claim 13,

wherein the metal conductive layers comprise a first molybdenum layer, an aluminum layer, a second molybdenum layer sequentially stacked over the indium layer or the indium-alloy layer,

wherein the first molybdenum layer is on and in contact with the indium layer or the indium-alloy layer.

20. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate having an insulating surface;

forming a gate insulating layer over the gate electrode layer;

forming an oxide semiconductor layer over the gate insulating layer;

forming a first metal layer on and in contact with the oxide semiconductor layer;

forming a stack of metal conductive layers over the first metal layer; and

etching the first metal layer and the stack of metal conductive layers, so that a source electrode layer and a drain electrode layer are formed,

wherein the first metal layer is a zinc layer or a zinc-alloy layer.

21. The method for manufacturing the semiconductor device, according to claim 20, wherein the stack is formed without being exposed to the air.

22. The method for manufacturing the semiconductor device, according to claim 20, wherein the oxide semiconductor layer contains zinc oxide.

23. The method for manufacturing the semiconductor device according to claim 20, wherein the metal conductive layers are formed using metal layer of an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, an alloy containing any of these elements as a component, or an alloy containing any of these elements in combination.

24. The method for manufacturing the semiconductor device according to claim 20, wherein the metal conductive layers are formed using a light-transmitting conductive material.

25. The method for manufacturing the semiconductor device according to claim 24, wherein the light-transmitting conductive material is selected from indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium tin oxide, indium zinc oxide, and indium tin oxide to which silicon oxide is added.

26. The method for manufacturing the semiconductor device according to claim 20,

wherein the metal conductive layers comprise a first molybdenum layer, an aluminum layer, a second molybdenum layer sequentially stacked over the zinc layer or the zinc-alloy layer,

wherein the first molybdenum layer is on and in contact with the zinc layer or the zinc-alloy layer.