Methods for passivating a carbonic nanolayer

• US 8,551,806 B2
• Filed: 10/22/2010
• Issued: 10/08/2013
• Est. Priority Date: 10/23/2009
• Status: Active Grant

• Current Assignee: ZEON Corporation
• Original Assignee: Nantero Incorporated
• Inventors: Rueckes, Thomas, Manning, H. Montgomery, Sen, Rahul
• Primary Examiner(s): Toledo, Fernando L
• Assistant Examiner(s): KUSUMAKAR, KAREN M
• Application Number:
  US12/910,714
• Publication Number:
  US 20110163290A1
• Time in Patent Office: 1,082 Days
• Field of Search: 438393-399, 438/665, 947/846
• US Class Current: 438/99
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: G11C 2213/16 Memory cell being a nanotube, e.g. suspended nanotube

Abstract

Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nano-scopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer.

Claims

1. A method for forming a carbonic nanolayer based device, comprising:

forming a carbonic nanolayer, said carbonic nanolayer comprising a plurality of carbon structures;

flowing a filler material over said carbonic nanolayer such that said filler material penetrates said carbonic nanolayer to form a barrier layer; and

depositing a non-hermetic material layer such that said carbonic nanolayer and said non-hermetic material layer have longitudinal axes that are substantially parallel; and

volatizing and removing at least a portion of said filler material from said carbonic nanolayer through said non-hermetic material layer.

2. The method of claim 1 wherein said barrier layer limits the encroachment of said material layer into said carbonic nanolayer.

3. The method of claim 1 further comprising etching away excess filler material after said flowing and prior to said depositing.

4. The method of claim 1 further comprising etching at least one of said material layer, said barrier layer, and said carbonic nanolayer to form a plurality of individual carbonic nanolayer based devices prior to said volatizing.

5. The method of claim 4 wherein said barrier layer provides structural support to said carbonic nanolayer during said etching.

6. The method of claim 1 wherein said non-hermetic material comprises a physical vapor deposited titanium nitride (TiN), tantalum nitride (TaN), or tungsten (W).

7. The method of claim 1 further comprising at least partially encapsulating at least one of said material layer, said barrier layer, and said carbonic nanolayer within a dielectric material layer prior to said volatizing.

8. The method of claim 7 wherein said dielectric material layer comprises silicon nitride (SiN).

9. The method of claim 1 wherein said volatizing is performed using a wet etch process.

10. The method of claim 9 wherein said wet etch process is a hydrofluoric etch process.

11. The method of claim 1 wherein said filler material is selected from the group consisting of phosphosilicate glass (PSG) oxide, amorphous carbon, silicon dioxide (SiO2), and silicon nitride (SiN).

12. The method of claim 1 where said filler material is a porous dielectric.

13. The method of claim 12 wherein said porous dielectric is one of silicon dioxide aerogel or porous silica.

14. The method of claim 1 wherein said barrier layer is formed through a room temperature physical vapor deposition (RTPVD) process.

15. The method of claim 14 wherein said filler material comprises tetraethyl orthosilicate (TEOS).

16. The method of claim 1 wherein said barrier layer is formed through a non-directional sputter deposition process.

17. The method of claim 16 wherein said filler material comprises titanium nitride (TiN).

18. The method of claim 1 wherein said carbon structures are selected from the group consisting of single wall carbon nanotubes, multi-wall carbon nanotubes, functionalized carbon nanotubes, oxidized carbon nanotubes, buckyballs, graphene sheets, nano-scopic grapheme flecks, and graphene oxide.