Visible light activatable photocatalyst
First Claim
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1. A visible light activatable mesoporous anatase phase titanium dioxide photocatalyst having a surface area of from 200 m2/g to 300 m2/g, and a band gap width of less than 2.95 eV and a rate of decomposition greater than 0.007 min−
- 1 at a wavelength of 450 nm.
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Abstract
A visible light activatable mesoporous titanium dioxide photocatalyst having a surface area of from 100 m2/g to 400 m2/g. The photocatalyst may have a rate of decomposition greater than 0.005 min−1. The photocatalyst may have a band gap width less than 2.95 eV. The photocatalyst may comprise undoped titanium dioxide or doped titanium dioxide. A hydrothermal process for synthesising a photocatalyst is also described.
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Citations
18 Claims
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1. A visible light activatable mesoporous anatase phase titanium dioxide photocatalyst having a surface area of from 200 m2/g to 300 m2/g, and a band gap width of less than 2.95 eV and a rate of decomposition greater than 0.007 min−
- 1 at a wavelength of 450 nm.
- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A photocatalyst comprising undoped mesoporous titanium dioxide with a band gap width of 2.9 eV and a surface area of between 100 m2/g and 400 m2/g.
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17. A process for forming a nanoporous crystalline material from an inorganic or organic precursor thereof comprising the steps of:
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i) preparing a suspension from the inorganic or organic precursor; and ii) utilising microwave irradiation, under non-pressurised conditions suitable to crystallise the material from the suspension, to crystallise the material from the suspension; wherein the process takes place at a temperature of about 100°
C.
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18. A process for the formation of a nanoporous crystalline material with a low energy band gap comprising the step of utilising microwave irradiation under non-pressurised conditions to crystallise a suspension of an inorganic or organic precursor of a nanoporous crystalline material under suitable conditions to form a nanoporous crystalline material with a low energy band gap, wherein the process takes place at a temperature of about 100°
- C.
Specification