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Method for reducing stress in epitaxial growth

  • US 8,552,465 B2
  • Filed: 11/09/2011
  • Issued: 10/08/2013
  • Est. Priority Date: 11/09/2011
  • Status: Expired due to Fees
First Claim
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1. A method for fabricating a semiconductor device, said method comprising:

  • depositing a precursor stress relief layer on a substrate characterized by a first TEC;

    epitaxially depositing a first semiconductor layer on said precursor stress relief layer, said first semiconductor layer being characterized by a second TEC, different from said first TEC; and

    converting said precursor stress relief layer to a stress relief layer comprising a stress relief material that relieves stress between said substrate and said first semiconductor layer arising from differences in said first and second TECs at a growth temperature at which layers are grown epitaxially on said first semiconductor layer, said stress relief material being non-crystalline at said growth temperature.

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