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X-Y address type solid state image pickup device and method of producing the same

  • US 8,552,483 B2
  • Filed: 07/03/2012
  • Issued: 10/08/2013
  • Est. Priority Date: 07/11/2001
  • Status: Expired due to Term
First Claim
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1. An imaging device comprising:

  • a well region of a first conductivity type within a semiconductor layer, said well region being between a first surface of the semiconductor layer and a light-receiving surface of the semiconductor layer;

    a first layer of the first conductivity type within said semiconductor layer, said first surface being between an interlayer insulating film and said first layer;

    a photo-electric conversion region of a second conductivity type within said semiconductor layer, said photo-electric conversion region being between said first layer and said light-receiving surface;

    an isolation region of the first conductivity type within said semiconductor layer, said isolation region being between said first surface and said light-receiving surface;

    a back side layer of the first conductivity type at said light-receiving surface, said back side layer extending into said semiconductor layer,wherein said back side layer is in physical contact with said isolation region, said well region being physical contact with said first layer and said photo-electric conversion region.

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