Semiconductor device
First Claim
1. A semiconductor device, comprising:
- a substrate, including;
a first surface;
at least one substrate pad, the substrate pad being disposed adjacent to the first surface; and
a solder mask disposed adjacent to the first surface and partially covering the substrate pad, the solder mask defining at least one solder mask opening so as to expose a part of the substrate pad;
a chip, disposed adjacent to the first surface of the substrate and electrically connected to the substrate, the chip including;
a chip body, including an active surface;
at least one chip pad, disposed adjacent to the active surface;
a first passivation, disposed adjacent to the active surface, and defining at least one first passivation opening so as to expose part of the chip pad; and
an under ball metal layer, disposed adjacent to the chip pad;
at least one metal pillar structure, wherein the metal pillar structure contacts the under ball metal layer to form a first contact surface having a first diameter, the metal pillar structure contacts the exposed part of the substrate pad to form a second contact surface having a second diameter, the first diameter is less than the second diameter, and the second diameter is substantially equal to a diameter of the solder mask opening; and
an underfill extending from the first passivation to the solder mask and circumscribing the at least one metal pillar structure.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention relates to a semiconductor device. The semiconductor device includes a substrate and a chip. The chip is electrically connected to the substrate. The chip includes a chip body, at least one chip pad, a first passivation, an under ball metal layer and at least one metal pillar structure. The chip pad is disposed adjacent to an active surface of the chip body. The first passivation is disposed adjacent to the active surface, and exposes part of the chip pad. The under ball metal layer is disposed adjacent to the chip pad. The metal pillar structure contacts the under ball metal layer to form a first contact surface having a first diameter. The metal pillar structure is electrically connected to a substrate pad of the substrate to form a second contact surface having a second diameter. The ratio of the first diameter to the second diameter is between 0.7 and 1.0. As a result, the first contact surface and the second contact surface have an equivalent bonding force, which prevents the metal pillar structure from cracking due to a shear stress. Thus, the structure strength of the semiconductor device is enhanced and the semiconductor device can pass the reliability test.
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Citations
20 Claims
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1. A semiconductor device, comprising:
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a substrate, including; a first surface; at least one substrate pad, the substrate pad being disposed adjacent to the first surface; and a solder mask disposed adjacent to the first surface and partially covering the substrate pad, the solder mask defining at least one solder mask opening so as to expose a part of the substrate pad; a chip, disposed adjacent to the first surface of the substrate and electrically connected to the substrate, the chip including; a chip body, including an active surface; at least one chip pad, disposed adjacent to the active surface; a first passivation, disposed adjacent to the active surface, and defining at least one first passivation opening so as to expose part of the chip pad; and an under ball metal layer, disposed adjacent to the chip pad; at least one metal pillar structure, wherein the metal pillar structure contacts the under ball metal layer to form a first contact surface having a first diameter, the metal pillar structure contacts the exposed part of the substrate pad to form a second contact surface having a second diameter, the first diameter is less than the second diameter, and the second diameter is substantially equal to a diameter of the solder mask opening; and an underfill extending from the first passivation to the solder mask and circumscribing the at least one metal pillar structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device, comprising:
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a substrate, including; a first surface; at least one substrate pad, the substrate pad being disposed adjacent to the first surface; and a solder mask disposed adjacent to the first surface and partially covering the substrate pad, the solder mask defining at least one solder mask opening so as to expose a part of the substrate pad; a chip, disposed adjacent to the first surface of the substrate and electrically connected to the substrate, the chip including; a chip body, including an active surface; at least one chip pad, disposed adjacent to the active surface; a first passivation, disposed adjacent to the active surface, and defining at least one first passivation opening so as to expose part of the chip pad; a second passivation disposed adjacent to the first passivation and having at least one second passivation opening so as to expose part of the chip pad; and an under ball metal layer, disposed adjacent to the chip pad; at least one metal pillar structure, wherein the metal pillar structure contacts the under ball metal layer to form a first contact surface having a first diameter, the metal pillar structure contacts the exposed part of the substrate pad to form a second contact surface having a second diameter, the first diameter is less than the second diameter, and the second diameter is substantially equal to a diameter of the solder mask opening; and an underfill extending from the second passivation to the solder mask and circumscribing the at least one metal pillar structure. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A semiconductor device, comprising:
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a substrate, including; a first surface; at least one substrate pad, the substrate pad being disposed adjacent to the first surface; and a solder mask disposed adjacent to the first surface and defining an exposed portion of the substrate pad smaller than the substrate pad; a chip, disposed adjacent to the first surface of the substrate and electrically connected to the substrate, the chip including; a chip body, including an active surface; at least one chip pad, disposed adjacent to the active surface; a first passivation, disposed adjacent to the active surface, and defining at least one first opening so as to expose part of the chip pad; and an under ball metal layer, disposed adjacent to the chip pad; and at least one metal pillar structure, wherein the metal pillar structure contacts the under ball metal layer to form a first contact surface having a first area, the metal pillar structure contacts the exposed portion of the substrate pad to form a second contact surface having a second area, the first area is smaller than the second area, and the second area is substantially equal to the exposed portion of the substrate pad. - View Dependent Claims (18, 19, 20)
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Specification