TFT-LCD array substrate and manufacturing method thereof

• US 8,553,166 B2
• Filed: 07/16/2010
• Issued: 10/08/2013
• Est. Priority Date: 07/17/2009
• Status: Active Grant

• Current Assignee: Beijing BOE Optoelectronics Technology Co Ltd. (BOE Technology Group Co., Ltd.), BOE Technology Group Co., Ltd.
• Original Assignee: Beijing BOE Optoelectronics Technology Co Ltd. (BOE Technology Group Co., Ltd.)
• Inventors: Liu, Xiang
• Primary Examiner(s): NGUYEN, THANH NHAN P
• Application Number:
  US12/837,821
• Publication Number:
  US 20110013106A1
• Time in Patent Office: 1,180 Days
• Field of Search: None
• US Class Current: 349/46
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A thin film transistor liquid crystal display (TFT-LCD) array substrate comprises a plurality of gate lines and a plurality of data lines on a substrate. A plurality of pixel regions are defined by the gate lines and the data lines. Each of the pixel regions comprises a pixel electrode and a thin film transistor serving as a switch element. The gate electrode of the thin film transistor is connected with a corresponding gate line through a connection electrode, and the gate electrode is formed by a material layer different from that forming the gate lines.

Claims

1. A thin film transistor liquid crystal display (TFT-LCD) array substrate, comprising:

a plurality of gate lines and a plurality of data lines on a substrate, and

a plurality of pixel regions defined by the gate lines and the data lines, each of the pixel regions comprising a pixel electrode and a thin film transistor serving as a switch element,

wherein a gate electrode of the thin film transistor is connected with a corresponding gate line through a connection electrode, and the gate electrode is formed by a material layer different from that forming the gate lines;

wherein the thin film transistor is a bottom gate type transistor.

2. The TFT-LCD array substrate according to claim 1, wherein a first insulating layer is formed on the gate lines to cover the entirety of the substrate, and the gate electrode and the pixel electrode are formed on the first insulating layer.

3. The TFT-LCD array substrate according to claim 2, wherein a second insulating layer is formed on the gate electrode and the pixel electrode to cover the entirety of the substrate, an active layer of the thin film transistor is formed on the second insulating layer and positioned on the gate electrode;

a source electrode of the thin film transistor is positioned on the active layer and connected with corresponding data line, and a drain electrode of the thin film transistor is positioned on the active layer and connected with the pixel electrode through a first via hole in the second insulating layer.

4. The TFT-LCD array substrate according to claim 2, wherein the connection electrode is formed on the second insulating layer, one end of the connection electrode is connected with the gate electrode through a second via hole in the second insulating layer, and the other end thereof is connected with corresponding gate line through a third via hole in the first insulating layer and the second insulating layer.

5. The TFT-LCD array substrate according to claim 1, wherein the gate electrode of the thin film transistor is formed by a transparent conductive film and provided on the same layer as the pixel electrode, and the gate electrode and the pixel electrode are formed by the same transparent conductive film.

6. The TFT-LCD array substrate according to claim 5, wherein the thickness of the transparent conductive film is 300-600 Å

.

7. The TFT-LCD array substrate according to claim 5, wherein a blocking layer is formed on the substrate, and the blocking layer is positioned below the gate electrode and provided on the same layer as the gate lines.

8. The TFT-LCD array substrate according to claim 1, wherein the gate electrode of the thin film transistor is formed by a metal film.

9. The TFT-LCD array substrate according to claim 8, wherein the thickness of the metal film is 300-1200 Å

.

10. A method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate, comprising:

Step 11 of depositing a gate metal film on a substrate and forming a gate line by patterning the gate metal film;

Step 12 of sequentially depositing a first insulating layer and a structural layer for forming a gate electrode and a pixel electrode on the substrate after the Step 11, and forming the gate electrode and the pixel electrode by patterning the structural layer;

Step 13 of sequentially depositing a second insulating layer, a semiconductor film and a doped semiconductor film on the substrate after the Step 12, and forming an active layer and a first via hole, a second via hole and a third via hole provided in the second insulating layer by patterning the stack of the above layers, wherein the active layer comprises a semiconductor layer and a doped semiconductor layer and is positioned on the gate electrode, the first via hole is positioned at the pixel electrode, the second via hole is positioned at the gate electrode and the third via hole is positioned at the gate line;

Step 14 of depositing a source/drain metal film on the substrate after the Step 13, and forming a data line, a drain electrode, a source electrode and a connection electrode by patterning the source/drain metal film, wherein the source electrode is positioned on the active layer and connected with the data line, the drain electrode is positioned on the active layer and connected with the pixel electrode through the first via hole, one end of the connection electrode is connected with the gate electrode through the second via hole and the other end thereof is connected with the gate line through the third via hole; and

Step 15 of depositing a third insulating layer on the substrate after the Step 14.

11. The method of manufacturing the TFT-LCD array substrate according to claim 10, wherein, in forming the gate line by patterning the gate metal film, a blocking layer is further formed, and the blocking layer is provided below the gate electrode to be formed.

12. The method of manufacturing the TFT-LCD array substrate according to claim 10, wherein the third insulating layer is patterned to form a gate pad via hole in a gate pad region and a data pad via hole in a data pad region.

13. The method of manufacturing the TFT-LCD array substrate according to claim 10, wherein the Step 13 comprises:

patterning the stack of the second insulating layer, the semiconductor film and the doped semiconductor film by using a half-tone mask or a gray-tone mask.

14. The method of manufacturing the TFT-LCD array substrate according to claim 10, wherein the structural layer in the Step 12 comprises a transparent conductive film, and the gate electrode and the pixel electrode are formed by patterning the transparent conductive film.

15. The method of manufacturing the TFT-LCD array substrate according to claim 10, wherein the structural layer in the Step 12 comprises a metal film for the gate electrode and a transparent conductive film for the pixel electrode.

16. The method of manufacturing the TFT-LCD array substrate according to claim 15, wherein in the Step 12, the transparent conductive film for the pixel electrode and the metal film for the gate electrode are sequentially deposited, and then the stack of the transparent conductive film for the pixel electrode and the metal film for the gate electrode are patterned by using a half-tone mask or a gray-tone mask to form the gate electrode and the pixel electrode, respectively.