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Method for fabrication of a semiconductor device and structure

  • US 8,557,632 B1
  • Filed: 04/09/2012
  • Issued: 10/15/2013
  • Est. Priority Date: 04/09/2012
  • Status: Active Grant
First Claim
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1. A method to process an Integrated Circuit device comprising:

  • processing a first layer of first transistors, thenprocessing a first metal layer overlaying said first transistors and providing at least one connection to said first transistors, thenprocessing a second metal layer overlaying said first metal layer, thenprocessing a second layer of second transistors overlaying said second metal layer, whereinsaid second metal layer is connected to provide power to at least one of said second transistors.

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