Semiconductor device and manufacturing method of the same

• US 8,558,227 B2
• Filed: 08/06/2012
• Issued: 10/15/2013
• Est. Priority Date: 06/30/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fujii, Gen
• Primary Examiner(s): Everhart, Caridad
• Application Number:
  US13/567,235
• Publication Number:
  US 20120298989A1
• Time in Patent Office: 435 Days
• Field of Search: 257/43, 257/E33.053, 257/E33.08, 257/E33.039, 257/E33.042, 257/E33.043, 257/66, 349/38, 349/43
• US Class Current: 257/43
• CPC Class Codes: C23C 18/1216 Metal oxides C23C18/1212 takes precedence
• CPC Class Codes: C23C 18/14 Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
• CPC Class Codes: C23C 18/1608 from pretreatment step, i.e. selective pre-treatment
• CPC Class Codes: C23C 18/165 Multilayered product layered product B32B
• CPC Class Codes: C23C 18/1651 Two or more layers only obtained by electroless plating
• CPC Class Codes: C23C 18/1893 with use of organic or inorganic compounds other than metals, first
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/458 for thin film silicon, e.g. source or drain electrode
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT

Abstract

The manufacturing method of the present invention includes steps of selectively forming a photocatalyst material or a material including an amino group by discharging a composition including the photocatalyst material or the material including an amino group; immersing the photocatalyst material or the material including an amino group in a solution including a plating catalyst material so as to adsorb or deposit the plating catalyst material onto the photocatalyst material or the material including an amino group; and immersing the plating catalyst material in a plating solution including a metal material so as to form a metal film on a surface of the photocatalyst material or the material including an amino group adsorbing or depositing the plating catalyst material, thereby manufacturing a semiconductor device. The pH of the solution including the plating catalyst material is adjusted in a range of 3 to 6.

Claims

1. A semiconductor device comprising:

a substrate;

a gate electrode layer over the substrate;

a gate insulating layer over the gate electrode layer;

a source electrode layer over the gate insulating layer;

a drain electrode layer over the gate insulating layer;

a semiconductor layer comprising indium and zinc over the source electrode layer, the drain electrode layer and the gate insulating layer, wherein the semiconductor layer is in contact with part of the gate insulating layer;

a pixel electrode layer electrically connected to one of the source electrode layer and the drain electrode layer; and

an EL layer over the pixel electrode layer,

wherein the semiconductor layer comprises a channel region, and

wherein the gate electrode layer is electrically connected to a wiring through a contact hole provided in the gate insulating layer.

2. The semiconductor device according to claim 1, wherein the substrate comprises a material selected from the group consisting of barium borosilicate glass, alumino borosilicate glass, a quartz substrate, a metal substrate and a plastic substrate.

3. The semiconductor device according to claim 1, wherein the gate electrode layer is formed by a plating method and comprises a material selected from the group consisting of nickel, a nickel alloy, copper, gold, cobalt and tin.

4. The semiconductor device according to claim 1, wherein the source electrode layer and the drain electrode layer are formed by discharging a liquid composition comprising a conductive material over the gate insulating layer using a droplet-discharge method.

5. A display device including the semiconductor device according to claim 1.

6. An electric device including the display device according to claim 5, wherein the electric device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle type display, a car navigation system, a car stereo, a personal computer, a game machine, a mobile computer, a cellular phone, an electronic book and an image reproducing device provided with a recording medium.

7. A semiconductor device comprising:

a substrate;

a gate electrode layer over the substrate;

a gate insulating layer over the gate electrode layer;

a source electrode layer over the gate insulating layer;

a drain electrode layer over the gate insulating layer;

a semiconductor layer comprising zinc, oxide, indium and gallium over the source electrode layer, the drain electrode layer and the gate insulating layer, wherein the semiconductor layer is in contact with part of the gate insulating layer;

a pixel electrode layer electrically connected to one of the source electrode layer and the drain electrode layer; and

an EL layer over the pixel electrode layer,

wherein the semiconductor layer comprises a channel region, and

wherein the gate electrode layer is electrically connected to a wiring through a contact hole provided in the gate insulating layer.

8. The semiconductor device according to claim 7, wherein the substrate comprises a material selected from the group consisting of barium borosilicate glass, alumino borosilicate glass, a quartz substrate, a metal substrate and a plastic substrate.

9. The semiconductor device according to claim 7, wherein the gate electrode layer is formed by a plating method and comprises a material selected from the group consisting of nickel, a nickel alloy, copper, gold, cobalt and tin.

10. The semiconductor device according to claim 7, wherein the source electrode layer and the drain electrode layer are formed by discharging a liquid composition comprising a conductive material over the gate insulating layer using a droplet-discharge method.

11. A display device including the semiconductor device according to claim 7.

12. An electric device including the display device according to claim 11, wherein the electric device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle type display, a car navigation system, a car stereo, a personal computer, a game machine, a mobile computer, a cellular phone, an electronic book and an image reproducing device provided with a recording medium.

13. A semiconductor device comprising:

a substrate;

a gate electrode layer over the substrate;

a gate insulating layer over the gate electrode layer;

a source electrode layer over the gate insulating layer;

a drain electrode layer over the gate insulating layer;

a semiconductor layer comprising zinc, oxide and indium or gallium over the source electrode layer, the drain electrode layer and the gate insulating layer, wherein the semiconductor layer is in contact with part of the gate insulating layer;

a pixel electrode layer electrically connected to one of the source electrode layer and the drain electrode layer; and

an EL layer over the pixel electrode layer,

wherein the semiconductor layer comprises a channel region, and

wherein the gate electrode layer is electrically connected to a wiring through a contact hole provided in the gate insulating layer.

14. The semiconductor device according to claim 13, wherein the substrate comprises a material selected from the group consisting of barium borosilicate glass, alumino borosilicate glass, a quartz substrate, a metal substrate and a plastic substrate.

15. The semiconductor device according to claim 13, wherein the gate electrode layer is formed by a plating method and comprises a material selected from the group consisting of nickel, a nickel alloy, copper, gold, cobalt and tin.

16. The semiconductor device according to claim 13, wherein the source electrode layer and the drain electrode layer are formed by discharging a liquid composition comprising a conductive material over the gate insulating layer using a droplet-discharge method.

17. A display device including the semiconductor device according to claim 13.

18. An electric device including the display device according to claim 17, wherein the electric device is one selected from the group consisting of a video camera, a digital camera, a projector, a goggle type display, a car navigation system, a car stereo, a personal computer, a game machine, a mobile computer, a cellular phone, an electronic book and an image reproducing device provided with a recording medium.