GaN LEDs with improved area and method for making the same

• US 8,558,247 B2
• Filed: 09/06/2011
• Issued: 10/15/2013
• Est. Priority Date: 09/06/2011
• Status: Active Grant

• Current Assignee: Alpad Corporation
• Original Assignee: Toshiba Techno Center Inc. (Toshiba Corporation)
• Inventors: Yang, Long
• Primary Examiner(s): Maldonado, Julio J
• Assistant Examiner(s): McCall Shepard, Sonya D
• Application Number:
  US13/226,404
• Publication Number:
  US 20120091464A1
• Time in Patent Office: 770 Days
• Field of Search: 257/79, 257/80, 257/81, 257/94, 257/E33.074, 257/E33.067, 257/E33.07, 438/22, 438/46, 438/47
• US Class Current: 257/81
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/0095 Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

Enlightening device and method for making the same are disclosed. Individual light emitting devices such as LEDs are separated to form individual dies by process in which a first narrow trench cuts the light emitting portion of the device and a second trench cuts the substrate to which the light emitting portion is attached. The first trench can be less than 10 μm. Hence, a semiconductor area that would normally be devoted to dicing streets on the wafer is substantially reduced thereby increasing the yield of devices. The devices generated by this method can also include base members that are electrically conducting as well as heat conducting in which the base member is directly bonded to the light emitting layers thereby providing improved heat conduction.

Claims

1. A device comprising:

an active layer sandwiched between first and second semiconductor layers of opposite types, said active layer emitting light of a predetermined wavelength when holes and electrons combine therein;

a mirror layer in contact with a surface of said second semiconductor layer that is not in contact with said active layer, said mirror having a surface area substantially equal to that of said active layer; and

a base member having a first surface in contact with said minor layer, said first surface having an area substantially equal to an area of said minor layer, said base member comprising a substrate having a second surface upon which the mirror layer is formed, the second surface of said substrate having an area smaller than said area of said minor layer, said base member having a cross-sectional area at locations distal from said first surface, said cross-section area being less than said area of said first surface.

2. The device of claim 1 wherein said first layer comprises an n-GaN layer with a surface that includes scattering features having dimensions greater than said predetermined wavelength.

3. The device of claim 1 wherein said base member has a thickness greater than 100 μ

m.

4. The device of claim 1 wherein said base member comprises an electrical conductor.

5. The device of claim 1 wherein said mirror is in contact with a layer of eutectic metal.

6. The device of claim 1 wherein said base member includes a layer of eutectic metal positioned between the substrate and the mirror layer.

7. The device of claim 1, wherein said base member includes an insulating layer between the mirror layer and the substrate.

8. The device of claim 3 wherein said base member comprises a metal.

9. The device of claim 4 wherein said electrical conductor is crystalline silicon.

10. The device of claim 6 wherein said base member includes an insulating layer between the layer of eutectic metal and the substrate.

11. The device of claim 8 wherein said metal is copper or nickel.