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Nitride semiconductor light emitting device and fabrication method thereof

  • US 8,558,258 B2
  • Filed: 06/15/2012
  • Issued: 10/15/2013
  • Est. Priority Date: 12/23/2004
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a substrate having a plurality of patterns;

    a first conductive semiconductor layer on a buffer layer, wherein the first conductive semiconductor layer includes first to third GaN-based layers, wherein the first GaN-based layer includes Si dopant, the second Ga-based layer includes a dopant having a lower concentration of Si than the first GaN-based layer, and the third GaN-based layer includes In material, wherein the first conductive semiconductor layer further comprises a fourth GaN-based layer including Al material, and wherein the fourth GaN-based layer has a planar surface;

    an active layer on the third GaN-based layer of the first conductive semiconductor layer, wherein the active layer comprises a single quantum well layer or a multi quantum well layer of InxGa1-xN/InyGa1-yN; and

    a second conductive semiconductor layer on the active layer.

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