Optoelectronic component having a dome-like conversion element

• US 8,558,259 B2
• Filed: 11/02/2009
• Issued: 10/15/2013
• Est. Priority Date: 11/13/2008
• Status: Expired due to Fees

• Current Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Wirth, Ralph
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US13/128,706
• Publication Number:
  US 20110272713A1
• Time in Patent Office: 1,443 Days
• Field of Search: 257/95, 257/98, 257/99, 257/100, 257/E33.068, 257/E33.073
• US Class Current: 257/95
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 33/50 Wavelength conversion elements

Abstract

An optoelectronic component includes a connection carrier on which at least two radiation-emitting semiconductor chips are arranged, a conversion element fixed to the connection carrier, wherein the conversion element spans the semiconductor chips such that the semiconductor chips are surrounded by the conversion element and the connection carrier, and at least two of the radiation-emitting semiconductor chips differ from one another with regard to wavelengths of electromagnetic radiation they emit during operation, wherein the conversion element spans the semiconductor chips as a dome.

Claims

1. An optoelectronic component comprising:

a connection carrier on which at least two radiation-emitting semiconductor chips are arranged, and

a conversion element fixed to the connection carrier, wherein

the conversion element consists of a ceramic material, is a mechanically self-supporting dome, and spans the semiconductor chips as a dome, and spans the semiconductor chips such that the semiconductor chips are surrounded by the conversion element and the connection carrier,

the at least two of the radiation-emitting semiconductor chips differ from one another with regard to wavelengths of electromagnetic radiation they emit during operation, and

at least one of the radiation-emitting semiconductor chips comprises a further conversion element and emits electromagnetic radiation from a spectral range of white light during operation.

2. The optoelectronic component according to claim 1, wherein at least one intermediate region filled with gas is arranged between the semiconductor chips and the conversion element.

3. The optoelectronic component according to claim 1, wherein an adhesive connector is arranged between the conversion element and the connection carrier, said connector directly adjoining the conversion element and the connection carrier.

4. The optoelectronic component according to claim 1, wherein the conversion element consists of a ceramic material or a glass ceramic material.

5. The optoelectronic component according to claim 1, wherein at least one of the radiation-emitting semiconductor chips emits electromagnetic radiation from a spectral range of red light during operation.

6. The optoelectronic component according to claim 5, wherein the semiconductor chip which emits white light comprises a semiconductor body downstream of which is disposed, at a radiation exit area, a further conversion element which converts at least part of the electromagnetic radiation generated in the semiconductor body during operation into electromagnetic radiation from a spectral range of yellow light.

7. The optoelectronic component according to claim 1, wherein an optical sensor is fixed on the connection carrier, said optical sensor being spanned by the conversion element that the optical sensor is surrounded by the conversion element and the connection carrier, wherein the optical sensor is designed to detect, during operation, the electromagnetic radiation generated by the radiation-emitting semiconductor chips during operation.

8. The optoelectronic component according to claim 1, wherein the semiconductor chips are embedded into a molded body.

9. The optoelectronic component according to claim 8, wherein the intermediate region extends between the molded body and the conversion element. wherein the intermediate region directly adjoins the molded body.

10. The optoelectronic component according to any of the preceding claim 1, wherein a coupling-out lens adjoins the outer surface of the conversion element, said outer surface facing away from the semiconductor chips.

11. The optoelectronic component according to claim 10, wherein the coupling-out lens comprises:

an inner surface which faces the semiconductor chips and is enclosed by an inner hemispherical surface having radius R_conversion , and

an outer surface which faces away from the semiconductor chips and encloses an outer hemispherical surface having radius R_outer , wherein

the radii R_conversion ,and R_outer meet the following condition;

R_outer≧

R_conversion*n_lens/n_air, wherein n_lens is the refractive index of the coupling-out lens.

12. The optoelectronic component according to claim 8, wherein

the molded body is enclosed, by a hemispherical surface having radius R_inner,

the semiconductor chips have a total radiation exit surface having area content A, and

the area content A and the radius R_inner meet condition A≦

½

*Pi*R_inner².

13. The optoelectronic component according to claim 12, wherein the area content A and the radius R_inner meet the condition A≧

1/20*Pi*R_inner².

14. The optoelectronic component according to claim 1, wherein the conversion element contains a luminescence conversion substance or consists of a luminescence conversion substance based on at least one selected from the group consisting of materials:

orthosilicate, thiogallates, sulfide, nitride, fluoride and garnet.

15. The optoelectronic component according to claim 1, wherein the conversion element contains a luminescence conversion substance or consists of a luminescence conversion substance which is activated with one dopant selected from the group consisting of Eu3+, Mn2+ and Mn4+.

16. The optoelectronic component according to claim 7, wherein the optical sensor is embedded into a molded body.

17. The optoelectronic component according to claim 1. Wherein the conversion element is a mechanically self-supporting dome.

18. The optoelectronic component according to claim 3, wherein the adhesive connector is applied in a thin layer having a thickness of at most 10 μ

m.

19. The optoelectronic component according to claim 1, wherein the conversion element comprises at least one phosphor or consists of an at least one phosphor which has a decay trim greater than 1 μ

s.

20. The optoelectronic component according to claim 1, wherein the at least one radiation-emitting semiconductor chip which emits white light during operation comprises a semiconductor body and the farther conversion element, wherein a conversion substance of the further conversion element is applied directly to a radiation exit surface of said semiconductor body.

21. The optoelectronic component according to claim 1, wherein the light emitted by the at least one radiation-emitting semiconductor chip which emits light during operation is converted twice including a conversion from blue light into yellow light.

22. The optoelectronic component according to claim 1, wherein the conversion element comprises a conversion substance which is more temperature sensitive than a conversion substance of the further conversion element.